DMN6040SFDE-7 60V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. Features 6.5A continuous drain current, 38mOhm on-resistance at 10V gate drive, and a compact U-DFN2020-6 surface mount package.
Mfr Part #:

DMN6040SFDE-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
60V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. Features 6.5A continuous drain current, 38mOhm on-resistance at 10V gate drive, and a compact U-DFN2020-6 surface mount package.
✓ Total Stock: 133,020 pcs

DMN6040SFDE-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
72,000 pcs
72000 pcs On Request 1 On Request On Request 1436+ On Request On Request
Non-Authorised Inventory information
61,020 pcs
61020 pcs On Request 1 On Request On Request On Request On Request On Request

DMN6040SFDE-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN6040SFDE-7 Description

Short technical summary and product information.

The DMN6040SFDE-7 is a 60V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for high-efficiency power management and general purpose switching applications. It offers a maximum drain-source voltage of 60V and continuous drain current of 6.5A at VGS=10V (5.2A at VGS=4.5V). The on-resistance is typically 38mOhm at VGS=10V and 47mOhm at VGS=4.5V, enabling low conduction losses.

 

The device features a gate charge of 22.4nC at VGS=10V and input capacitance of 1287pF at VDS=25V, supporting efficient switching. It is housed in a compact U-DFN2020-6 (Type E) surface mount package with a 0.6mm profile and 4mm² footprint, ideal for space-constrained designs. The operating junction temperature range is -55°C to 150°C.

 

The DMN6040SFDE-7 is 100% Unclamped Inductive Switch (UIS) tested in production and qualified to JEDEC standards. It is fully RoHS compliant, lead-free, and halogen-free (Green device). Typical applications include general purpose interfacing switches and power management functions in low-profile electronics.

DMN6040SFDE-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN6040SFDE-7 - 60V N-Channel MOSFET, 6.5A, 38mOhm, U-DFN2020-6
Subcategory: N-Channel MOSFET

DMN6040SFDE-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN6040SFDE-7 Features

  • 60V drain-source voltage rating.
  • 6.5A continuous drain current at 10V gate drive.
  • Low on-resistance: 38mOhm at VGS=10V.
  • Compact U-DFN2020-6 surface mount package.
  • RoHS compliant and halogen-free.

DMN6040SFDE-7 Applications

  • General purpose interfacing switch.
  • Power management functions.
  • Low-profile applications requiring 0.6mm height.
  • High-efficiency DC-DC converters.

DMN6040SFDE-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

-55°C to 150°C (junction).

Is this device RoHS compliant?

Yes, fully RoHS compliant and lead-free.

What is the package type?

U-DFN2020-6 (Type E) surface mount package.

What is the maximum drain-source voltage?

60V.

What is the continuous drain current rating?

6.5A at VGS=10V, TA=+25°C.

What is the on-resistance?

38mOhm max at VGS=10V, ID=4.3A; 47mOhm max at VGS=4.5V.

What is the gate threshold voltage?

3V max at ID=250µA.

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