DMN601WKQ-7 N-Channel enhancement mode MOSFET rated for 60V drain-source voltage and 300mA continuous drain current. Features low on-resistance of 2Ω at 10V gate drive and is AEC-Q101 qualified for automotive applications.
Mfr Part #:

DMN601WKQ-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET rated for 60V drain-source voltage and 300mA continuous drain current. Features low on-resistance of 2Ω at 10V gate drive and is AEC-Q101 qualified for automotive applications.
✓ Total Stock: 30 pcs

DMN601WKQ-7 Available from 1 distributor

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DMN601WKQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMN601WKQ-7 Description

Short technical summary and product information.

The DMN601WKQ-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated designed for automotive and general-purpose switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 300mA at 25°C ambient, with a pulsed drain current of up to 800mA. The device offers a low on-resistance of 2Ω maximum at VGS=10V and ID=500mA, with a gate threshold voltage of 2.5V at 1mA. Input capacitance is 50pF at VDS=25V, and the gate is ESD protected for robustness.

 

The MOSFET is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive motor controls, power management, and backlighting applications. It operates over a junction temperature range of -65°C to 150°C, with a maximum power dissipation of 200mW at 25°C ambient.

 

The device is supplied in a surface-mount SC-70/SOT-323 package with matte tin annealed terminals over an Alloy 42 leadframe. The package weight is 0.006 grams, and it is shipped in tape and reel carrier with a standard quantity of 3,000 units. The DMN601WKQ-7 is fully RoHS3 compliant, lead-free, halogen- and antimony-free, and has an MSL rating of 1 (unlimited).

DMN601WKQ-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN601WKQ-7 N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel

DMN601WKQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMN601WKQ-7 Features

  • Low on-resistance of 2Ω at 10V gate drive.
  • AEC-Q101 qualified for automotive applications.
  • ESD protected gate for robust operation.
  • Surface mount package in SC-70/SOT-323.
  • RoHS3 compliant and halogen-free green device.

DMN601WKQ-7 Applications

  • Ideal for motor control circuits in automotive systems.
  • Used in power management functions for portable devices.
  • Suitable for backlighting applications in displays.
  • Perfect for low-power switching applications.

DMN601WKQ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN601WKQ-7?

The maximum drain-source voltage is 60V.

What is the continuous drain current rating?

The continuous drain current is 300mA at 25°C ambient temperature.

What is the maximum drain-source on-resistance?

The maximum on-resistance is 2Ω at VGS=10V and ID=500mA.

What is the operating temperature range?

The operating junction temperature range is -65°C to 150°C.

Is the DMN601WKQ-7 automotive qualified?

Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

What package does the DMN601WKQ-7 come in?

It comes in an SC-70, SOT-323 surface-mount package.

Is the DMN601WKQ-7 RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen- and antimony-free.

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