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DMN601VKQ-7 Dual N-Channel Enhancement Mode MOSFET from Diodes Incorporated. Rated for 60V drain-source voltage and 305mA continuous drain current with 2Ω on-resistance at 10V gate drive.
Mfr Part #:

DMN601VKQ-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel Enhancement Mode MOSFET from Diodes Incorporated. Rated for 60V drain-source voltage and 305mA continuous drain current with 2Ω on-resistance at 10V gate drive.
Total Stock: 7,020 pcs

DMN601VKQ-7 Available from 1 distributor

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DMN601VKQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain Current, Pulsed
Drain to Source Voltage (Vdss)
ESD Protection
Gate-Source Voltage (Vgss)
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Packing
Power
Rds On (Max) @ Id, Vgs
Standard Package Quantity
Supplier Device Package
Technology
Terminal Finish
Vgs(th) (Max) @ Id
Weight
rds_on (Maximum @ VGS=4.5 V)

DMN601VKQ-7 Description

Short technical summary and product information.

The DMN601VKQ-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for general-purpose interfacing switches, power management functions, and analog switches. It features a drain-source voltage rating of 60V, a continuous drain current of 305mA at 25°C, and a pulsed drain current of 800mA. The device offers low on-resistance: 2Ω maximum at VGS=10V and 3Ω maximum at VGS=4.5V, with a low gate threshold voltage of 2.5V maximum. Input capacitance is 50pF at 25V, and it includes ESD protection rated at 2kV (human body model).

 

This MOSFET is qualified to AEC-Q101 for automotive applications and is manufactured in IATF 16949 certified facilities. It is RoHS3 compliant, lead-free, and halogen-free (green device). The device is housed in a small SOT-563 surface-mount package, which measures approximately 0.003 grams, and is supplied in tape and reel packaging with 3,000 units per reel.

 

The operating temperature range is -65°C to 150°C (junction), with a maximum power dissipation of 250mW at 25°C ambient. The DMN601VKQ-7 is a suitable replacement for the obsolete part and is recommended for use in power-management and switching applications where space is limited.

DMN601VKQ-7 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: Dual N-Channel MOSFET, 60V, 305mA, SOT563
Subcategory: Dual N-Channel

DMN601VKQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN601VKQ-7 Features

  • Dual N-channel MOSFET in a single SOT563 package.
  • Low on-resistance of 2Ω at 10V gate drive.
  • Rated for 60V drain-source voltage and 305mA continuous current.
  • AEC-Q101 qualified for automotive applications.
  • RoHS3 compliant and halogen-free.

DMN601VKQ-7 Applications

  • General-purpose interfacing switches.
  • Power management functions.
  • Analog switches.
  • Automotive applications requiring high reliability.

DMN601VKQ-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN601VKQ-7?

The maximum drain-source voltage (Vdss) is 60V.

What package is the DMN601VKQ-7 available in?

The DMN601VKQ-7 is available in an SOT563 surface-mount package.

What is the operating temperature range of the DMN601VKQ-7?

The operating junction temperature range is -65°C to 150°C.

Is the DMN601VKQ-7 RoHS compliant?

Yes, the DMN601VKQ-7 is RoHS3 compliant.

What is the on-resistance of the DMN601VKQ-7 at different gate voltages?

The maximum on-resistance is 2Ω at VGS=10V (ID=500mA) and 3Ω at VGS=4.5V.

Does the DMN601VKQ-7 have ESD protection?

Yes, it is rated for 2kV ESD protection (human body model).

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