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DMN601DWKQ-7 Dual N-channel enhancement mode MOSFET. 60V drain-source voltage, 305mA continuous drain current, 2 Ohm maximum on-resistance at 10V gate drive. Surface mount SOT-363 package.
Mfr Part #:

DMN601DWKQ-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET. 60V drain-source voltage, 305mA continuous drain current, 2 Ohm maximum on-resistance at 10V gate drive. Surface mount SOT-363 package.
Total Stock: 4,020 pcs

DMN601DWKQ-7 Available from 1 distributor

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DMN601DWKQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC-Q101
Configuration
Current
Drain Current, Pulsed
Drain to Source Voltage (Vdss)
ESD Protection
Gate Charge (Qg) (Max) @ Vgs
Gate-Source Voltage (Max)
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Standard Package Quantity
Supplier Device Package
Technology
Terminal Finish
Vgs(th) (Max) @ Id
Weight
drain_source_on_resistance (Maximum @ Vgs=5 V)

DMN601DWKQ-7 Description

Short technical summary and product information.

The DMN601DWKQ-7 is a dual N-channel enhancement mode field effect transistor from Diodes Incorporated. It features a drain-source voltage rating of 60V and a continuous drain current of 305mA at 25°C ambient. The device offers low on-resistance of 2 Ohm maximum at Vgs=10V and Id=500mA, and 3 Ohm maximum at Vgs=5V. Gate threshold voltage is 2.5V maximum at Id=1mA.

 

Designed for automotive and general-purpose power management applications, this MOSFET is qualified to AEC-Q101 standards and is PPAP capable. It provides ESD protection up to 2kV and features low input capacitance of 50pF typical.

 

The device is housed in an ultra-small SOT-363 surface mount package, measuring approximately 0.006 grams. It is RoHS3 compliant, lead-free, halogen-free, and antimony-free, making it suitable for environmentally sensitive designs. Moisture sensitivity level is 1 per J-STD-020 for unlimited floor life.

DMN601DWKQ-7 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN601DWKQ-7 – Dual N-Channel Enhancement Mode MOSFET, 60V, 305mA, SOT-363
Subcategory: Dual N-Channel

DMN601DWKQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN601DWKQ-7 Features

  • Dual N-channel MOSFET in a single package.
  • Rated for 60V drain-source voltage.
  • Low on-resistance of 2 Ohm maximum.
  • AEC-Q101 qualified for automotive reliability.
  • SOT-363 surface mount package, RoHS compliant.

DMN601DWKQ-7 Applications

  • Suitable for automotive motor control circuits.
  • Used in power management and load switching.
  • Ideal for low-power DC-DC converter designs.
  • Applicable for signal switching and level shifting.
  • Works in battery management and protection circuits.

DMN601DWKQ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the DMN601DWKQ-7?

The maximum drain-source voltage is 60V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 305mA at TA=25°C.

What is the operating temperature range?

The operating temperature range is -65°C to 150°C (junction temperature).

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant, totally lead-free, and halogen-free per the datasheet.

What package does the DMN601DWKQ-7 come in?

It is supplied in an SOT-363 surface mount package (6-pin TSSOP/SC-88 equivalent).

What is the maximum on-resistance at Vgs=10V?

The maximum on-resistance is 2 Ohm at Vgs=10V and Id=500mA.

Is the DMN601DWKQ-7 qualified for automotive applications?

Yes, it is AEC-Q101 qualified and PPAP capable.

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