DMN601DWK-7 The DMN601DWK-7 is a 60V dual N-channel enhancement-mode MOSFET from Diodes Incorporated. It offers a 305mA continuous drain current, 2Ω maximum on-resistance at VGS=10V, and comes in a SOT-363 surface-mount package.
Mfr Part #:

DMN601DWK-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN601DWK-7 is a 60V dual N-channel enhancement-mode MOSFET from Diodes Incorporated. It offers a 305mA continuous drain current, 2Ω maximum on-resistance at VGS=10V, and comes in a SOT-363 surface-mount package.
✓ Total Stock: 94,440 pcs

DMN601DWK-7 Available from 3 distributors

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DMN601DWK-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs(th) (Max) @ Id
Weight

DMN601DWK-7 Description

Short technical summary and product information.

The DMN601DWK-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET housed in an ultra-small SOT-363 surface-mount package. It is designed for space-constrained power-management applications, offering a drain-source breakdown voltage of 60V and a continuous drain current of 305mA at +25°C (800mA pulsed).

 

Key electrical characteristics include a maximum drain-source on-resistance of 2Ω at VGS=10V and 3Ω at VGS=5V, with a logic-level gate threshold voltage of 2.5V maximum. The device features a low input capacitance of 50pF at VDS=25V and is ESD protected up to 2kV. Maximum power dissipation is 200mW, and the junction operating temperature range is -65°C to +150°C.

 

The MOSFET is supplied in tape and reel packaging (3,000 pieces) and is RoHS3 compliant, lead-free, halogen-free, and MSL Level 1 per J-STD-020. Typical applications include motor control and power-management functions in compact electronic devices.

DMN601DWK-7 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel Enhancement-Mode MOSFET
Subcategory: Dual N-Channel Enhancement-Mode MOSFET

DMN601DWK-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN601DWK-7 Features

  • Dual N-channel enhancement-mode MOSFET design.
  • 60V drain-source breakdown voltage rating.
  • 305mA continuous drain current capability.
  • 2Ω maximum on-resistance at 10V gate drive.
  • ESD protected up to 2kV.

DMN601DWK-7 Applications

  • Suitable for motor control circuits.
  • Used in power-management functions.

DMN601DWK-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the DMN601DWK-7?

The DMN601DWK-7 has a minimum drain-source breakdown voltage of 60V.

What package is the DMN601DWK-7 available in?

The DMN601DWK-7 is available in a SOT-363 surface-mount package.

What is the operating temperature range of the DMN601DWK-7?

The junction operating temperature range is -65°C to +150°C.

Is the DMN601DWK-7 RoHS compliant?

Yes, the DMN601DWK-7 is RoHS3 compliant per the datasheet, and it is also lead-free and halogen-free.

What is the continuous drain current rating at +25°C?

The maximum continuous drain current is 305mA at TA=+25°C; pulsed drain current is rated at 800mA.

What is the maximum drain-source on-resistance?

Maximum RDS(on) is 2Ω at VGS=10V (ID=500mA) and 3Ω at VGS=5V.

Is the DMN601DWK-7 ESD protected?

Yes, the device is ESD protected up to 2kV.

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