| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
91,020 pcs
|
91020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,101 pcs
|
3101 pcs | On Request | 1 | On Request | On Request | 1008+ | On Request | On Request | |
|
319 pcs
|
319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Termination Finish | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN601DWK-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET housed in an ultra-small SOT-363 surface-mount package. It is designed for space-constrained power-management applications, offering a drain-source breakdown voltage of 60V and a continuous drain current of 305mA at +25°C (800mA pulsed).
Key electrical characteristics include a maximum drain-source on-resistance of 2Ω at VGS=10V and 3Ω at VGS=5V, with a logic-level gate threshold voltage of 2.5V maximum. The device features a low input capacitance of 50pF at VDS=25V and is ESD protected up to 2kV. Maximum power dissipation is 200mW, and the junction operating temperature range is -65°C to +150°C.
The MOSFET is supplied in tape and reel packaging (3,000 pieces) and is RoHS3 compliant, lead-free, halogen-free, and MSL Level 1 per J-STD-020. Typical applications include motor control and power-management functions in compact electronic devices.
The DMN601DWK-7 has a minimum drain-source breakdown voltage of 60V.
The DMN601DWK-7 is available in a SOT-363 surface-mount package.
The junction operating temperature range is -65°C to +150°C.
Yes, the DMN601DWK-7 is RoHS3 compliant per the datasheet, and it is also lead-free and halogen-free.
The maximum continuous drain current is 305mA at TA=+25°C; pulsed drain current is rated at 800mA.
Maximum RDS(on) is 2Ω at VGS=10V (ID=500mA) and 3Ω at VGS=5V.
Yes, the device is ESD protected up to 2kV.