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DMN6013LFGQ-7 60V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. Features 10.3A continuous drain current and low 13mΩ on-resistance.
Mfr Part #:

DMN6013LFGQ-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
60V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. Features 10.3A continuous drain current and low 13mΩ on-resistance.
✓ Total Stock: 11,020 pcs

DMN6013LFGQ-7 Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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11,020 pcs
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11020 pcs On Request 1 On Request On Request On Request On Request On Request
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DMN6013LFGQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN6013LFGQ-7 Description

Short technical summary and product information.

The DMN6013LFGQ-7 is a 60V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for automotive and power conversion applications. Key electrical specifications include a drain-source voltage rating of 60V, maximum continuous drain current of 10.3A at ambient temperature (45A at case temperature), and a low on-resistance of 13mΩ at 10V gate drive (18mΩ at 4.5V). The device has a gate threshold voltage of 3V maximum, input capacitance of 2577pF, and gate charge of 55.4nC.

 

Packaged in the compact PowerDI3333-8 surface mount package, the part is thermally efficient and occupies minimal board area. It is lead-free, RoHS3 compliant, halogen and antimony free, and rated for operation from -55°C to 150°C junction temperature. The MOSFET is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications such as motor control, DC-DC converters, and reverse polarity protection.

 

Available in tape and reel packaging with 2000 pieces per reel, the DMN6013LFGQ-7 is an ideal choice for high-efficiency switching circuits requiring robust performance in harsh environments.

DMN6013LFGQ-7 Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: DMN6013LFGQ-7 N-Channel MOSFET 60V 10.3A PowerDI3333-8
Subcategory: N-Channel Enhancement Mode MOSFET

DMN6013LFGQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN6013LFGQ-7 Features

  • Low Rds(on) of 13mΩ at 10V gate drive.
  • Rated for 60V drain-source voltage and 10.3A continuous current.
  • AEC-Q101 qualified for automotive applications.
  • RoHS compliant and halogen-free.
  • Surface mount PowerDI3333-8 package.

DMN6013LFGQ-7 Applications

  • Ideal for motor control applications.
  • Used in DC-DC converters.
  • Suitable for reverse polarity protection.
  • Automotive power management systems.

DMN6013LFGQ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of this MOSFET?

60 V

What is the continuous drain current rating?

10.3 A at TA=25°C, 45 A at TC=25°C

What is the on-resistance of this MOSFET?

13 mOhm at VGS=10V, Id=10A; 18 mOhm at VGS=4.5V, Id=8.8A

What is the gate threshold voltage?

3 V max at Id=250µA

What package does this MOSFET come in?

PowerDI3333-8 (8-PowerVDFN)

What is the operating temperature range?

-55°C to 150°C (TJ)

What is the input capacitance?

2577 pF at Vds=30V

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