DMN5L06VKQ-7 The Diodes Incorporated DMN5L06VKQ-7 is a dual N-channel enhancement mode MOSFET with a 50V drain-source voltage and 280mA continuous drain current. It is housed in an ultra-small SOT-563 surface mount package.
Mfr Part #:

DMN5L06VKQ-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated DMN5L06VKQ-7 is a dual N-channel enhancement mode MOSFET with a 50V drain-source voltage and 280mA continuous drain current. It is housed in an ultra-small SOT-563 surface mount package.
✓ Total Stock: 1,941 pcs

DMN5L06VKQ-7 Available from 1 distributor

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DMN5L06VKQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

DMN5L06VKQ-7 Description

Short technical summary and product information.

The Diodes Incorporated DMN5L06VKQ-7 is a dual N-channel enhancement mode MOSFET designed for high efficiency power management applications. It features a low on-state resistance (RDS(ON)) of 2 Ohms at VGS = 5V, and a maximum continuous drain current (ID) of 280mA at TA = +25°C. The device also boasts a very low gate threshold voltage (Vgs(th)) of 1.0V maximum.

 

This MOSFET is suitable for general purpose interfacing switches and offers fast switching speeds with low input capacitance. It is ESD protected up to 2kV and comes in an ultra-small SOT-563 package, making it ideal for space-constrained designs. The component is surface mountable and features a matte tin finish over a copper leadframe.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 50V. The operating temperature range is from -55°C to 150°C (TJ). This device is RoHS compliant and halogen-free, aligning with environmental standards for modern electronic designs.

DMN5L06VKQ-7 Quick Information

Product Type: MOSFET
Canonical Name: Diodes Incorporated DMN5L06VKQ-7 Dual N-Channel MOSFET
Subcategory: Dual N-Channel

DMN5L06VKQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN5L06VKQ-7 Features

  • Dual N-channel enhancement mode MOSFET.
  • 50V drain-to-source voltage.
  • Low 2 Ohm on-resistance.
  • 1.0V maximum gate threshold voltage.
  • Ultra-small SOT-563 surface mount package.

DMN5L06VKQ-7 Applications

  • Ideal for power management applications.
  • Suitable for general purpose switches.
  • Used in space-constrained designs.

DMN5L06VKQ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the DMN5L06VKQ-7?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the DMN5L06VKQ-7 available in?

The DMN5L06VKQ-7 is available in the SOT-563 package.

Is the DMN5L06VKQ-7 RoHS compliant?

Yes, the DMN5L06VKQ-7 is Totally Lead-Free & Fully RoHS Compliant.

What is the maximum drain-to-source voltage (Vdss) for this MOSFET?

The maximum drain-to-source voltage (Vdss) is 50V.

What is the maximum on-resistance (Rds On) for the DMN5L06VKQ-7?

The maximum on-resistance (Rds On) is 2 Ohm at VGS = 5V.

What is the maximum continuous drain current (Id) for the DMN5L06VKQ-7?

The maximum continuous drain current (Id) is 280mA.

What is the maximum gate threshold voltage (Vgs(th))?

The maximum gate threshold voltage (Vgs(th)) is 1.0V.

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