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DMN5L06VAK-7 Dual N-channel enhancement mode MOSFET by Diodes Incorporated. Rated for 50V drain-source voltage, 280mA continuous drain current, with 2 Ohm on-resistance at 5V gate drive.
Mfr Part #:

DMN5L06VAK-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET by Diodes Incorporated. Rated for 50V drain-source voltage, 280mA continuous drain current, with 2 Ohm on-resistance at 5V gate drive.
✓ Total Stock: 11,856 pcs

DMN5L06VAK-7 Available from 2 distributors

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✓ Non-Authorised
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PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
8,800 pcs
On Request
8800 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
3,056 pcs
On Request
3056 pcs On Request 1 On Request On Request 19+ On Request On Request
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DMN5L06VAK-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
Weight
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DMN5L06VAK-7 Description

Short technical summary and product information.

The DMN5L06VAK-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a logic level gate with a maximum threshold voltage of 1V at 250µA, making it ideal for low voltage drive circuits. With a drain-source breakdown voltage of 50V and continuous drain current rating of 280mA, this device is well-suited for battery-powered and portable applications.

 

Electrical characteristics include a maximum on-resistance of 2 ohms at 50mA and 5V Vgs, and low input capacitance of 50pF at 25V Vds for fast switching. The MOSFET is ESD protected up to 2kV and operates over a junction temperature range of -55°C to 150°C.

 

The device is housed in an ultra-small SOT-563 surface mount package, with molded plastic green molding compound meeting UL 94V-0 flammability rating. It is fully RoHS3 compliant, halogen-free, and antimony-free, with matte tin annealed terminal finish.

DMN5L06VAK-7 Quick Information

Product Type: Dual N-Channel MOSFET Array
Series: DMN5L06VK
Canonical Name: Dual N-Channel Enhancement Mode MOSFET, 50V, 280mA, SOT-563
Subcategory: MOSFET Arrays

DMN5L06VAK-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMN5L06VAK-7 Features

  • Dual N-channel enhancement mode MOSFET.
  • Low on-resistance of 2 Ohm at 5V.
  • Logic level gate threshold voltage.
  • Low input capacitance for fast switching.
  • ESD protected up to 2kV.

DMN5L06VAK-7 Applications

  • Suitable for low voltage switching applications.
  • Ideal for power management in portable devices.
  • Used in load switching circuits.

DMN5L06VAK-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the DMN5L06VAK-7?

The maximum drain-to-source voltage (Vdss) is 50V.

What is the package type for this MOSFET?

The device is available in SOT-563 and SOT-666 packages, with the supplier device package being SOT-563.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN5L06VAK-7 RoHS compliant?

Yes, it is fully RoHS3 compliant as per the datasheet.

What is the continuous drain current rating?

The continuous drain current (Id) is 280 mA.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at a drain current of 250µA.

Does this MOSFET have ESD protection?

Yes, it is ESD protected up to 2kV.

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