| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,100 pcs
|
14100 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | 2026-06-03 08:15:10 | |
|
1,330 pcs
|
1330 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN5L06K-7 is a N-Channel enhancement-mode MOSFET from Diodes Incorporated. It utilizes MOSFET (Metal Oxide) technology and is designed for low-power switching applications. The device is rated for a maximum drain-source voltage of 50V and a continuous drain current of 300mA at ambient temperature.
Key electrical characteristics include a maximum drain-source on-resistance of 2 Ohm at a drain current of 50mA and gate-source voltage of 5V, and 1.8V drive capability for reduced Rds(on). The gate threshold voltage is a maximum of 1V at 250µA drain current. Input capacitance is 50pF at 25V drain-source voltage, contributing to fast switching performance.
The MOSFET is housed in a SOT-23-3 surface-mount package, making it suitable for compact designs. It has a maximum power dissipation of 350mW at ambient temperature and can operate over a junction temperature range of -65°C to 150°C. The device is RoHS3 compliant, REACH unaffected, and has an MSL rating of Level 1 (unlimited).
50V.
SOT-23-3 surface mount package.
-65°C to 150°C (junction).
RoHS3 compliant (unverified).
1V at 250µA drain current.
2 Ohm at 50mA drain current and 5V gate drive.
350mW at ambient temperature.