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DMN5L06DWK-7 Dual N-channel enhancement mode MOSFET from Diodes Incorporated. Features 50V drain-source voltage, 305mA continuous drain current, and low on-resistance of 2Ω in a surface-mount SOT-363 package.
Mfr Part #:

DMN5L06DWK-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET from Diodes Incorporated. Features 50V drain-source voltage, 305mA continuous drain current, and low on-resistance of 2Ω in a surface-mount SOT-363 package.
Total Stock: 7,145 pcs

DMN5L06DWK-7 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,415 pcs
5415 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,730 pcs
1730 pcs On Request 1 On Request On Request 1312+ On Request On Request

DMN5L06DWK-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Case Material
Configuration
Current
Drain Current, Pulsed
Drain to Source Voltage (Vdss)
ESD Protection Voltage
FET Feature
Gate-Source Voltage
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Standard Package Quantity
Supplier Device Package
Tape & Reel
Technology
Terminal Finish
UL Flammability
Vgs(th) (Max) @ Id
Weight

DMN5L06DWK-7 Description

Short technical summary and product information.

The DMN5L06DWK-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a drain-source voltage rating of 50V, gate-source voltage of ±20V, and continuous drain current of 305mA at 25°C (pulsed up to 800mA). The device offers a low on-resistance of 2Ω maximum at Vgs=5V and Id=50mA, with a logic-level gate threshold voltage of 1V maximum at Id=250µA. Input capacitance is 50pF maximum at Vds=25V, and the device includes ESD protection up to 2kV.

 

This MOSFET is designed for low-power switching applications and is housed in a compact SOT-363 surface-mount package. It operates over a junction temperature range of -65°C to 150°C and dissipates up to 250mW at 25°C. The part is fully RoHS3 compliant, lead-free, and halogen-free (green). Moisture sensitivity is Level 1 (unlimited).

 

Note: This part is not recommended for new designs. Diodes Incorporated suggests the DMN61D9UDW as a replacement.

DMN5L06DWK-7 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: DMN5L06DWK-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel

DMN5L06DWK-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN5L06DWK-7 Features

  • Dual N-channel enhancement mode MOSFET.
  • Low on-resistance of 2Ω maximum.
  • Logic level gate for 5V drive.
  • ESD protected up to 2kV.
  • Surface mount SOT-363 package.

DMN5L06DWK-7 Applications

  • Suitable for low-power switching circuits.
  • Ideal for battery-powered portable devices.
  • Used in logic-level load switching.
  • Applicable in signal switching applications.

DMN5L06DWK-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range for this MOSFET?

The drain-source voltage is 50V and the gate-source voltage is ±20V.

What package is the DMN5L06DWK-7 available in?

It is available in a 6-TSSOP, SC-88, SOT-363 surface-mount package, with the supplier device package being SOT-363.

What is the operating temperature range?

The operating junction temperature range is -65°C to 150°C.

Is the DMN5L06DWK-7 RoHS compliant?

Yes, it is RoHS3 compliant and also totally lead-free and halogen-free (green).

What is the continuous drain current rating?

The continuous drain current is 305mA at TA=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 2Ω at Id=50mA and Vgs=5V.

Does this device have ESD protection?

Yes, it is ESD protected up to 2kV.

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