| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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103 pcs
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103 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMN5L06DMKQ-7 is a dual N-Channel enhancement-mode MOSFET from Diodes Incorporated. It is designed with a maximum drain-to-source voltage of 50V and a continuous drain current of 305mA, making it suitable for low-power switching and load management applications.
Key electrical characteristics include a maximum Rds(on) of 2 Ohms at Id=50mA and Vgs=5V, and a gate threshold voltage of 1V at Id=250µA. The device also features a typical input capacitance of 50pF at Vds=25V, ensuring efficient high-frequency operation.
The MOSFET is housed in a compact SOT-23-6 surface-mount package, with a supplier device package of SOT-26. It supports an operating junction temperature range from -65°C to 150°C, providing robust thermal performance in demanding environments.
This dual configuration allows designers to consolidate two independent N-channel MOSFETs into a single package, saving board space and simplifying layout in applications such as power management, signal switching, and battery-powered circuits.
50V
305mA
SOT-23-6 surface-mount package (also known as supplier device package SOT-26)
-65°C to 150°C junction temperature
Reported as RoHS3 compliant, but this is unverified and has low confidence.
1V maximum at Id=250µA
Two N-Channel MOSFETs (dual configuration)