| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,000 pcs
|
29000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
820 pcs
|
820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN55D0UTQ-7 is an N-Channel Enhancement Mode MOSFET designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for high-efficiency power management applications.
Key specifications include a maximum drain-source breakdown voltage of 50V, continuous drain current of 160mA at 25°C, and a maximum on-resistance of 4 Ohms at Vgs=4V and Id=100mA. The gate threshold voltage is as low as 1V maximum, allowing direct drive from low-voltage logic. Input capacitance is only 25pF at Vds=10V, enabling fast switching. The device also features ESD protection up to 2kV on the gate.
The MOSFET is supplied in a SOT-523 surface-mount package with a molded plastic green molding compound and matte tin finish leads. It meets UL 94V-0 flammability rating and has a moisture sensitivity level of 1 per J-STD-020. The device weighs approximately 0.002 grams.
Typical applications include motor driving, power management functions, and load switching. The device is fully RoHS3 compliant, lead-free, and halogen and antimony free.
The maximum drain-source breakdown voltage is 50 V.
It is available in a surface-mount SOT-523 package.
The operating temperature range is -55°C to 150°C (junction).
Yes, it is RoHS3 compliant and lead-free.
The maximum gate threshold voltage is 1 V at a drain current of 250 µA.
The maximum on-resistance is 4 Ohms at Vgs = 4 V and Id = 100 mA.