DMN53D0U-7 N-Channel enhancement mode MOSFET with 50V drain-source voltage rating and 300mA continuous drain current. Packaged in SOT-23 for surface mount applications.
Mfr Part #:

DMN53D0U-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 50V drain-source voltage rating and 300mA continuous drain current. Packaged in SOT-23 for surface mount applications.
✓ Total Stock: 700 pcs

DMN53D0U-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
500 pcs
500 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
200 pcs
200 pcs On Request 1 On Request On Request 19+ On Request On Request

DMN53D0U-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN53D0U-7 Description

Short technical summary and product information.

The DMN53D0U-7 is an N-Channel enhancement mode field effect transistor designed by Diodes Incorporated. It features a maximum drain-source voltage of 50V and continuous drain current of 300mA at +25°C ambient. The device offers low on-resistance: 2Ω typical at 50mA, 5V gate drive, and 2.5Ω typical at 200mA, 2.5V gate drive. The gate threshold voltage is 1V maximum at 250µA drain current. With low input capacitance of 37.1pF and gate charge of 0.6nC, the MOSFET supports fast switching performance suitable for high efficiency power management. The part is packaged in a SOT-23 case (SOT-23-3 supplier package), with surface mount mounting type. It is fully RoHS compliant, lead-free, halogen-free, and qualified to AEC-Q101 standards for automotive reliability. Operating temperature range is -55°C to +150°C.

DMN53D0U-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN53D0U-7 N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel Enhancement Mode MOSFET

DMN53D0U-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL Level 1
REACH Status: REACH Unaffected
Lead Free: Lead Free (compliant)

DMN53D0U-7 Features

  • N-Channel enhancement mode MOSFET
  • Drain-source voltage rated 50V
  • Continuous drain current 300mA
  • Low on-resistance 2Ω at 5V
  • SOT-23 surface mount package

DMN53D0U-7 Applications

  • Ideal for high efficiency power management
  • Used in load switching applications
  • Suitable for battery powered devices
  • Designed for DC-DC converter circuits

DMN53D0U-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the DMN53D0U-7?

The maximum drain-source voltage is 50 V.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package does the DMN53D0U-7 come in?

It comes in a SOT-23-3 package (SOT23 case).

Is the DMN53D0U-7 RoHS compliant?

Yes, it is RoHS3 compliant and fully lead-free and halogen-free.

What is the maximum continuous drain current?

The continuous drain current is 300 mA at TA=+25°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1 V at ID=250 µA.

What is the typical on-resistance at VGS=5V?

The typical on-resistance is 2 Ohm at ID=300mA, VGS=5V.

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