| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
154,020 pcs
|
154020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN53D0LV-7 is a dual N-channel enhancement mode field-effect transistor from Diodes Incorporated, designed for high-efficiency power management applications. It combines two independent MOSFETs in a single ultra-small SOT563 surface-mount package, saving board space and simplifying layout.
Key electrical specifications include a drain-source voltage (BVDSS) of 50V, a continuous drain current of 350mA at +25°C, and a maximum on-resistance of 1.6 Ohm at Vgs=10V (Id=350mA) or 2.5 Ohm at Vgs=4.5V (Id=200mA). The device features very low gate threshold voltage, low input capacitance (46pF), and fast switching speed, making it suitable for load switching and power management circuits.
The MOSFET is packaged in a SOT563 surface-mount package with matte tin plated leads, is RoHS3 compliant, totally lead-free, and halogen and antimony free (Green). Moisture sensitivity is Level 1 (unlimited).
The maximum drain-source voltage (BVDSS) is 50V.
The maximum continuous drain current is 350mA at +25°C.
The on-resistance is 1.6 Ohm maximum at Vgs=10V (Id=350mA) and 2.5 Ohm maximum at Vgs=4.5V (Id=200mA).
The DMN53D0LV-7 is available in the SOT563 surface-mount package.
Yes, the DMN53D0LV-7 is RoHS3 compliant and totally lead-free.
The operating temperature range is -55°C to +150°C (junction).
The maximum gate threshold voltage is 1.5V at Id=250µA.