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DMN53D0LDW-7 Dual N-channel enhancement mode MOSFET rated for 50V drain-source voltage and 360mA continuous drain current in a small SOT-363 surface mount package.
Mfr Part #:

DMN53D0LDW-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET rated for 50V drain-source voltage and 360mA continuous drain current in a small SOT-363 surface mount package.
✓ Total Stock: 229,020 pcs

DMN53D0LDW-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
229,020 pcs
On Request
229020 pcs On Request 1 On Request On Request On Request On Request On Request
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DMN53D0LDW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination
Vgs(th) (Max) @ Id
Weight
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DMN53D0LDW-7 Description

Short technical summary and product information.

The DMN53D0LDW-7 is a dual N-channel enhancement mode field effect transistor from Diodes Incorporated, designed for high efficiency power management applications. It features a 50V drain-source breakdown voltage and a continuous drain current of 360mA at 25°C. The device offers low on-resistance: 1.6Ω maximum at 10V gate drive and 2.5Ω maximum at 4.5V gate drive, making it suitable for low-voltage switching. With low input capacitance of 46pF and a maximum gate charge of 0.6nC, it enables fast switching speeds. The MOSFET is ESD protected to 2kV and comes in a compact SOT-363 package (6-TSSOP/SC-88 compatible). It is RoHS3 compliant, halogen and antimony free, and the mold compound meets UL 94V-0 flammability classification. Typical applications include DC-DC converters, power management functions, battery operated systems, and relay/solenoid drivers.

DMN53D0LDW-7 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: DMN53D0LDW-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel

DMN53D0LDW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN53D0LDW-7 Features

  • Dual N-channel enhancement mode MOSFET.
  • Low on-resistance: 1.6Ω max at 10V gate drive.
  • ESD protected to 2kV.
  • RoHS3 compliant and halogen free.
  • Surface mount SOT-363 package.

DMN53D0LDW-7 Applications

  • Used in DC-DC converter circuits.
  • Ideal for battery operated systems.
  • Suitable for relay and solenoid drivers.
  • Used in power management functions.

DMN53D0LDW-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN53D0LDW-7?

50V.

What is the continuous drain current rating?

360mA at TA=25°C.

What is the package type for this MOSFET?

SOT-363 (6-TSSOP, SC-88, SOT-363).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the DMN53D0LDW-7 RoHS compliant?

Yes, fully RoHS3 compliant.

What is the maximum on-resistance at 10V gate drive?

1.6Ω at 500mA.

Does the device include ESD protection?

Yes, ESD protected to 2kV.

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