DMN53D0L-7 N-Channel enhancement mode MOSFET with 50V drain-source voltage and 500mA continuous drain current. Packaged in a surface-mount SOT-23 package.
Mfr Part #:

DMN53D0L-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 50V drain-source voltage and 500mA continuous drain current. Packaged in a surface-mount SOT-23 package.
✓ Total Stock: 70,318 pcs

DMN53D0L-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
58,020 pcs
58020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
12,298 pcs
12298 pcs On Request 1 On Request On Request 21+ On Request On Request

DMN53D0L-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN53D0L-7 Description

Short technical summary and product information.

The DMN53D0L-7 is an N-Channel enhancement mode field effect transistor from Diodes Incorporated, designed for high-efficiency power management applications. It features a drain-source voltage of 50V and a continuous drain current of 500mA at 25°C. The device offers low on-resistance: 1.6Ω maximum at VGS=10V and 2.5Ω maximum at VGS=4.5V, enabling efficient switching.

 

Electrical characteristics include a very low gate threshold voltage of 1.5V maximum at ID=250µA, low input capacitance of 46pF maximum at VDS=25V, and low gate charge of 0.6nC maximum at VGS=4.5V. These parameters contribute to fast switching speeds and reduced power losses in low-voltage circuits.

 

The MOSFET is housed in a surface-mount SOT-23 package, weighing approximately 0.008 grams. It is fully RoHS3 compliant, lead-free, and halogen-free (Green device). The moisture sensitivity level is 1 per J-STD-020, and the operating junction temperature range is -55°C to 150°C. The device is qualified to JEDEC standards for high reliability.

 

Typical applications include load switching, DC-DC converters, and power management in portable electronics and other battery-powered systems. An automotive-compliant variant (DMN53D0LQ) is available under a separate datasheet.

DMN53D0L-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN53D0L-7 N-Channel Enhancement Mode Field Effect Transistor
Subcategory: N-Channel MOSFET

DMN53D0L-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN53D0L-7 Features

  • Low on-resistance of 1.6Ω at 10V.
  • Very low gate threshold voltage of 1.5V.
  • Low input capacitance of 46pF.
  • Surface-mount SOT-23 package.
  • RoHS3 compliant and lead-free.

DMN53D0L-7 Applications

  • Ideal for high-efficiency power management.
  • Used in load switching circuits.
  • Suitable for DC-DC converter designs.
  • Applicable in portable electronics.

DMN53D0L-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

50V maximum.

What is the maximum drain current?

500mA at TA=25°C.

What is the on-resistance?

1.6Ω maximum at VGS=10V and ID=500mA; 2.5Ω maximum at VGS=4.5V and ID=200mA.

What is the gate threshold voltage?

1.5V maximum at ID=250µA.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package is available?

SOT-23 surface-mount package.

Is the device RoHS compliant?

Yes, RoHS3 compliant per datasheet.

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