| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,800 pcs
|
37800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
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The DMN5010VAK-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for surface mount applications. It features a maximum drain-source voltage of 50V and a continuous drain current of 280mA. The device offers a low on-resistance of 2 Ohm at 50mA and 5V gate drive, and a low gate threshold voltage of 1V. It is housed in a compact SOT-563 package, making it suitable for space-constrained designs. The MOSFET is logic level gate compatible and includes ESD protection up to 2kV. It is qualified to AEC-Q101 standards for automotive applications and is RoHS compliant. Typical applications include load switching, DC-DC converters, and signal switching circuits.
50V.
SOT-563.
-55°C to 150°C (junction).
Yes, RoHS3 compliant.
280mA maximum.
2 Ohm maximum at 50mA, 5V.
Yes, qualified to AEC-Q101 standards.