DistyParts Icon
DMN4800LSS-13 N-Channel Enhancement Mode MOSFET, 30V drain-source voltage, 8.6A continuous drain current. Low on-resistance of 16mOhm at 10V gate drive. Surface mount in 8-SOIC package.
Mfr Part #:

DMN4800LSS-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel Enhancement Mode MOSFET, 30V drain-source voltage, 8.6A continuous drain current. Low on-resistance of 16mOhm at 10V gate drive. Surface mount in 8-SOIC package.
✓ Total Stock: 245 pcs

DMN4800LSS-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
235 pcs
On Request
235 pcs On Request 1 On Request On Request 14+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
10 pcs
On Request
10 pcs On Request 1 On Request On Request 14+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN4800LSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
View Similar Products (0)

DMN4800LSS-13 Description

Short technical summary and product information.

This MOSFET is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high efficiency power management applications. It features low on-resistance, low input capacitance, and fast switching speed. Key electrical specifications include a drain-source voltage of 30V, continuous drain current of 8.6A at 25°C (6.3A at 70°C), and pulsed drain current of 50A. The maximum RDS(on) is 16mOhm at Vgs=10V and Id=9A. The device is qualified to AEC-Q101 standards for high reliability. It is packaged in an 8-pin SOIC (SO-8) case with surface mount configuration. The package is molded plastic with green molding compound, UL 94V-0 flammability rating, and moisture sensitivity level 1. The device is totally lead-free, RoHS compliant, and halogen and antimony free. Suitable for applications such as backlighting, power management functions, and DC-DC converters.

DMN4800LSS-13 Quick Information

Product Type: MOSFET
Canonical Name: DMN4800LSS-13 N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel MOSFET

DMN4800LSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN4800LSS-13 Features

  • 30V drain-source voltage rating.
  • 8.6A continuous drain current at 25°C.
  • Low 16mOhm on-resistance at 10V gate drive.
  • AEC-Q101 qualified for automotive reliability.
  • Surface mount 8-SOIC package.

DMN4800LSS-13 Applications

  • Ideal for backlighting power management.
  • Used in DC-DC converter circuits.
  • Suitable for general power management functions.

DMN4800LSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of this MOSFET?

30V drain-source voltage.

What package is the DMN4800LSS-13 available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is this MOSFET RoHS compliant?

Yes, it is fully RoHS3 compliant.

What is the maximum on-resistance?

16mOhm at Vgs=10V, Id=9A.

What is the gate threshold voltage?

1.6V maximum at Id=250µA.

Is this device qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards.

Home
Account

Categories