DMN4468LSS-13 DMN4468LSS-13 is an N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features a 30V drain-source breakdown voltage, 10A continuous drain current, and low on-resistance of 14mOhm at 10V gate drive.
Mfr Part #:

DMN4468LSS-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN4468LSS-13 is an N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features a 30V drain-source breakdown voltage, 10A continuous drain current, and low on-resistance of 14mOhm at 10V gate drive.
✓ Total Stock: 5,086 pcs

DMN4468LSS-13 Available from 2 distributors

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3000 pcs On Request 1 On Request On Request 24+ On Request On Request
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2,086 pcs
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DMN4468LSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMN4468LSS-13 Description

Short technical summary and product information.

The DMN4468LSS-13 is an N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It offers a drain-source breakdown voltage of 30V and a continuous drain current of 10A at 25°C ambient temperature. The device features a low maximum on-resistance of 14mOhm at Vgs = 10V and 20mOhm at Vgs = 4.5V, enabling efficient switching and reduced conduction losses.

 

This MOSFET is housed in an industry-standard SO-8 surface mount package with gull wing leads and a 1.27mm lead pitch. It is qualified to AEC-Q101 standards for high reliability and is fully RoHS compliant, lead-free, and halogen-free. The device is moisture sensitivity level 1 per J-STD-020, allowing unlimited floor life.

 

Typical applications include backlighting, power management functions, and DC-DC converters. The low input capacitance of 867pF and gate charge of 18.85nC support fast switching speeds, making it suitable for high-frequency power conversion circuits.

DMN4468LSS-13 Quick Information

Product Type: MOSFET
Canonical Name: DMN4468LSS-13 N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN4468LSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN4468LSS-13 Features

  • N-Channel enhancement mode MOSFET design.
  • 30V drain-source breakdown voltage rating.
  • 10A continuous drain current capability.
  • Low 14mOhm on-resistance at 10V gate drive.
  • AEC-Q101 qualified for automotive reliability.

DMN4468LSS-13 Applications

  • Ideal for backlighting power management circuits.
  • Used in DC-DC converter designs.
  • Suitable for general power management functions.

DMN4468LSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the DMN4468LSS-13?

The maximum drain-source breakdown voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 10A at Ta = +25°C and 9A at Ta = +70°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 14mOhm at Vgs = 10V, Id = 11.6A, and 20mOhm at Vgs = 4.5V, Id = 8A.

What package does the DMN4468LSS-13 come in?

It comes in an 8-SOIC (SO-8) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN4468LSS-13 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

Is this MOSFET qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards.

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