| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
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110 pcs
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110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMN4036LK3-13 is a 40V N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a drain-source breakdown voltage of 40V and a continuous drain current rating of 8.5A at 25°C ambient, with a maximum on-resistance of 36mΩ at VGS=10V and 61mΩ at VGS=4.5V.
This MOSFET is designed for high-efficiency power management applications such as backlighting, DC-DC converters, and general power management functions. It offers low on-resistance and fast switching speed. The device is qualified to AEC-Q101 standards for high reliability.
The DMN4036LK3-13 is supplied in a surface-mount TO-252-3 (DPak) package with a molded plastic case rated UL 94V-0 and matte tin termination finish. It is a RoHS compliant and halogen-free "Green" component, with a moisture sensitivity level of 1 per J-STD-020, allowing unlimited floor life.
The maximum drain-source voltage is 40V.
The continuous drain current at 25°C ambient is 8.5A, with higher ratings of 12.2A and 9.7A at 25°C and 70°C respectively under specific test conditions (VGS=10V).
The maximum on-resistance is 36mΩ at VGS=10V and ID=12A, and 61mΩ at VGS=4.5V and ID=9.4A.
It is available in a surface-mount TO-252-3 (DPak) package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and also described as a Green component (halogen-free).
MSL Level 1 (unlimited floor life) per J-STD-020.