| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
121,020 pcs
|
121020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Finish | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN4035LQ-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It is designed for automotive applications and is AEC-Q101 qualified. The device features a maximum drain-source voltage of 40V and a continuous drain current of 4.6A at 25°C with VGS=10V. The on-resistance is typically 42mOhm at VGS=10V, ensuring efficient power handling.
This MOSFET offers low input capacitance (574pF) and fast switching speed, making it suitable for DC-DC converters, power management functions, and battery charging circuits. It supports drive voltages of 4.5V and 10V, with a gate threshold voltage of 3V maximum.
The DMN4035LQ-13 is housed in a surface-mount SOT23-3 package (TO-236-3, SC-59) with matte tin annealed over copper leadframe terminals. It is fully RoHS compliant, halogen and antimony free, and classified as moisture sensitivity level 1 per J-STD-020. The device is supplied in tape and reel packaging with 10,000 pieces per reel.
The DMN4035LQ-13 is packaged in a surface-mount SOT-23-3 (TO-236-3, SC-59) case.
The operating junction temperature range is -55°C to 150°C.
Yes, the DMN4035LQ-13 is RoHS3 compliant as verified in the datasheet.
The maximum drain-source voltage (Vdss) is 40V.
The maximum continuous drain current is 4.6A at 25°C with VGS=10V, and 4.1A at 25°C with VGS=4.5V.
The maximum gate threshold voltage is 3V at ID=250µA.
The maximum on-resistance is 42mOhm at VGS=10V, ID=4.3A, and 52mOhm at VGS=4.5V, ID=4.1A.