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DMN4034SSD-13 The DMN4034SSD-13 is a 40V dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a low on-resistance of 34mΩ at 10V and is rated for a continuous drain current of 4.8A at 25°C.
Mfr Part #:

DMN4034SSD-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN4034SSD-13 is a 40V dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a low on-resistance of 34mΩ at 10V and is rated for a continuous drain current of 4.8A at 25°C.
Total Stock: 3,520 pcs

DMN4034SSD-13 Available from 1 distributor

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DMN4034SSD-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Avalanche Current (Ias)
Avalanche Energy (EAS)
Case Material
Configuration
Continuous Drain Current (ID) (Maximum @ VGS=10 V, TA=25 °C)
Continuous Drain Current (ID) (Maximum @ VGS=10 V, TA=70 °C)
Continuous Source Current (Body Diode) (IS)
Current
Drain to Source Voltage (Vdss)
Drain-Source On-State Resistance (Maximum @ VGS=4.5 V, ID=4.8 A)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Gate-Source Voltage (Vgs)
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package Type
Power
Pulsed Drain Current (Idm)
Pulsed Source Current (Body Diode) (ISM)
Rds On (Max) @ Id, Vgs
Reel Size
Standard Package Quantity
Supplier Device Package
Tape Width
Technology
Termination Finish
Thermal Resistance Junction to Ambient (RθJA)
Thermal Resistance Junction to Lead (RθJL)
Vgs(th) (Max) @ Id
Weight

DMN4034SSD-13 Description

Short technical summary and product information.

The DMN4034SSD-13 is a 40V dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency power management applications. It integrates two independent N-channel MOSFETs in a single 8-SOIC package, offering a compact solution for space-constrained designs.

 

Key electrical specifications include a maximum drain-source voltage of 40V, a continuous drain current of 6.3A at 25°C with a 10V gate drive, and a low on-resistance of 34mΩ at VGS=10V. The device also supports logic-level gate drive with an RDS(on) of 59mΩ at VGS=4.5V. It features a maximum gate charge of 18nC and an input capacitance of 453pF, enabling fast switching performance.

 

The MOSFET is housed in a surface-mount SO-8 package with a matte tin finish and is rated for an operating junction temperature range of -55°C to 150°C. It is qualified to AEC-Q101 standards for high reliability and is RoHS compliant and halogen free.

DMN4034SSD-13 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN4034SSD-13 — 40V Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel

DMN4034SSD-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected
Lead Free: Lead Free (Matte Tin)

DMN4034SSD-13 Features

  • 40V drain-source voltage rating.
  • Low on-resistance of 34mΩ at 10V.
  • Logic-level gate drive capability.
  • Dual N-channel in 8-SOIC package.
  • AEC-Q101 qualified for automotive use.

DMN4034SSD-13 Applications

  • Ideal for DC-DC converter circuits.
  • Used in motor control applications.
  • Suitable for backlighting power management.
  • Designed for high efficiency power switching.

DMN4034SSD-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN4034SSD-13?

The maximum drain-source voltage (Vdss) is 40V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 6.3A at VGS=10V and 4.8A at VGS=4.5V, both at TA=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 34mΩ at VGS=10V and ID=6A, and 59mΩ at VGS=4.5V and ID=4.8A.

What package does the DMN4034SSD-13 come in?

It comes in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN4034SSD-13 RoHS compliant?

Yes, it is RoHS compliant and halogen free (Green).

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at ID=250µA.

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