DMN4031SSD-13

DMN4031SSD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications. The device features a drain-source voltage (Vdss) of 40V and a continuous drain current of 5.2A, with maximum ratings of 7.0A at VGS=10V and 5.8A at VGS=4.5V (TA=25°C). The on-resistance (Rds(on)) is 31mΩ maximum at VGS=10V and 50mΩ maximum at VGS=4.5V, enabling efficient operation at logic-level gate voltages. The gate charge (Qg) is 18.6nC maximum at VGS=10V, and input capacitance (Ciss) is 945pF maximum at VDS=20V. The device is packaged in an SO-8 (8-SOIC) surface-mount package, with a weight of 0.072 grams and MSL Level 1 per J-STD-020. Operating junction temperature range is -55°C to 150°C. Thermal resistance from junction to ambient is 88°C/W (Note 5) and 48°C/W (Note 6). Power dissipation is 2.6W maximum at TA=25°C (Note 6). The part is fully RoHS3 compliant, lead-free, and halogen and antimony free. Applications include motor controls, backlighting, power management functions, and DC-DC converters. An automotive-compliant version (DMN4031SSDQ) is available under a separate datasheet. Note: Lifecycle status is 'Not recommended for new design'.