| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN4027SSD-13 is a dual N-channel enhancement mode MOSFET designed for high efficiency power management applications. It offers a drain-source breakdown voltage of 40V, continuous drain current of 5.4A at 25°C (7.1A at 25°C with Vgs=10V), and a maximum on-resistance of 27mΩ at Vgs=10V and Id=7A. The device also specifies on-resistance of 47mΩ at Vgs=4.5V, enabling logic level operation. Key electrical characteristics include a gate threshold voltage of 3V max at 250µA, gate charge of 12.9nC at 10V, and input capacitance of 604pF at 20V. The MOSFET is housed in a surface mount 8-SOIC package (0.154" width, 3.90mm width) with a molded plastic green compound. It is rated for operating junction temperatures from -55°C to 150°C and has a power dissipation of 1.25W (notes 6 & 9) and 1.8W (notes 6 & 10). The part is fully RoHS3 compliant, lead-free, halogen- and antimony-free, and qualified to AEC-Q101 standards for high reliability (applicable to DMN4027SSDQ-13 variant). It is supplied in tape and reel packaging with 2500 pieces per reel.
The drain-source breakdown voltage is 40V minimum.
The device is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The junction temperature range is -55°C to 150°C.
Yes, it is fully RoHS compliant (RoHS3) and lead-free.
7.1A at Vgs=10V and TA=25°C.
47mΩ maximum at Vgs=4.5V.
Yes, it features a logic level gate with specified Rds(on) at 4.5V.