| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The DMN4015LK3-13 is a 40V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. This device is ideal for high efficiency power management applications such as backlighting, DC-DC converters, and general power management functions.
Key electrical specifications include a drain-source breakdown voltage of 40V (minimum), continuous drain current ratings of 13.5A at TA=25°C (steady-state) and up to 20.8A for t≤10 seconds. The drain-source on-resistance is typically 15mOhm at VGS=10V and 20mOhm at VGS=4.5V. The device supports a gate-source voltage of ±20V, with a gate threshold voltage of up to 3V at ID=250µA. Input capacitance is 2072pF at VDS=20V and total gate charge is 42nC at VGS=10V.
The MOSFET is housed in a TO-252-3 (DPak) surface mount package with a weight of 0.33 grams. It operates over a junction temperature range of -55°C to 150°C. Thermal characteristics include a maximum power dissipation of 4.36W (steady-state, TA=25°C) and junction-to-ambient thermal resistance of 28.6°C/W (steady-state). The component is RoHS3 compliant, MSL Level 1, and features UL 94V-0 rated molded plastic case material.
Please note that the DMN4015LK3-13 has been discontinued per the manufacturer datasheet; availability should be verified before ordering.
The drain-source breakdown voltage is 40V (minimum).
The device comes in a TO-252-3 (DPak) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant and also defined as a 'Green' component (halogen and antimony free).
13.5A at TA=25°C (steady-state), up to 20.8A for t≤10 seconds, and 72.8A pulsed.
Maximum 15mOhm at VGS=10V, ID=14A; maximum 20mOhm at VGS=4.5V, ID=18A.
The datasheet indicates the device is discontinued.