| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
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The DMN4008LFG-7 is a 40V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency power management applications. It delivers a maximum continuous drain current of 14.4A at +25°C (steady state) and features a low on-state resistance of 7.5mOhm maximum at 10V gate drive, minimizing conduction losses.
This device supports drive voltages of 3.3V and 10V, allowing compatibility with both 3.3V and 5V logic levels. Gate charge is typically 74nC at 10V, and input capacitance is 3537pF at 20V drain-source voltage. The MOSFET is rated for maximum junction temperature of +150°C.
The part is housed in the compact PowerDI3333-8 surface mount package, which offers improved thermal performance and occupies minimal board space. It is supplied in tape and reel packaging with 2000 units per reel. The device is RoHS3 compliant, halogen and antimony free, and qualified to AEC-Q101 standards for automotive reliability.
40 V.
14.4 A (steady state, VGS=10V).
7.5 mOhm at VGS=10V, ID=10A.
-55°C to +150°C (junction temperature).
8-PowerVDFN (PowerDI3333-8).
Yes, it is RoHS3 compliant.