DMN3731U-7 30V N-Channel enhancement mode MOSFET with 0.9A continuous drain current. Features low on-resistance of 460mOhm at 4.5V gate drive, ideal for load switching and power management.
Mfr Part #:

DMN3731U-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
30V N-Channel enhancement mode MOSFET with 0.9A continuous drain current. Features low on-resistance of 460mOhm at 4.5V gate drive, ideal for load switching and power management.
✓ Total Stock: 10,020 pcs

DMN3731U-7 Available from 1 distributor

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DMN3731U-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN3731U-7 Description

Short technical summary and product information.

The DMN3731U-7 is a 30V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It is ideal for high-efficiency power management applications such as load switches, portable devices, and general power management functions.

 

Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 0.9A at 25°C (0.7A at 70°C), and pulsed drain current up to 3A. The on-resistance is 460mOhm maximum at VGS=4.5V and 560mOhm at VGS=2.5V, enabling efficient low-voltage operation. The gate threshold voltage is typically 0.7V with a maximum of 0.95V, allowing direct drive from low-voltage sources. The device features an ESD protected gate for robust handling.

 

The MOSFET is housed in a SOT23 surface mount package (SOT-23-3) with matte tin annealed terminals over a copper leadframe, solderable per MIL-STD-202. The molded plastic case is green molding compound with UL 94V-0 flammability rating. Thermal resistance is 303°C/W junction-to-ambient on standard FR4 PCB, with power dissipation of 400mW (580mW on 1 inch² FR4). Operating junction temperature range is -55°C to 150°C.

 

Environmental compliance includes RoHS3, lead-free, and halogen-free (green device) certifications. Moisture sensitivity level is 1 (unlimited). Available in tape and reel packaging with 3,000 pieces per 7-inch reel or 10,000 pieces per 13-inch reel.

DMN3731U-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN3731U-7
Subcategory: N-Channel MOSFET

DMN3731U-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN3731U-7 Features

  • 30V drain-source voltage rating.
  • 0.9A continuous drain current at 25°C.
  • Low on-resistance of 460mOhm at 4.5V gate drive.
  • ESD protected gate for robust operation.
  • SOT23 surface mount package.

DMN3731U-7 Applications

  • Ideal for load switch applications.
  • Suitable for portable battery-powered devices.
  • Used in power management functions.

DMN3731U-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30 V.

What is the continuous drain current rating?

0.9 A at TA=25°C (steady state) and 0.7 A at TA=70°C.

What is the on-resistance?

460 mOhm maximum at VGS=4.5V and 560 mOhm maximum at VGS=2.5V (ID=200 mA).

What package is the DMN3731U-7 available in?

SOT23 (SOT-23-3) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the DMN3731U-7 RoHS compliant?

Yes, it is RoHS3 compliant and also lead-free and halogen-free (green device).

Does the MOSFET have ESD protection?

Yes, it features an ESD protected gate.

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