| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
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The DMN3730UFB-7 is a 30V N-Channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed for low on-state resistance and efficient switching, suitable for power management in portable applications.
Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 0.91A at 25°C (0.73A at 70°C), and a low RDS(on) of 460mΩ at VGS=4.5V and 0.9A. The gate threshold voltage is 950mV at 250µA. The device also offers ESD protection of 2kV.
The MOSFET is housed in an ultra-compact X1-DFN1006-3 surface mount package with a footprint of 0.6mm², making it suitable for space-constrained designs. It is rated for operating junction temperatures from -55°C to 150°C and has a maximum power dissipation of 470mW.
The DMN3730UFB-7 is AEC-Q101 qualified for automotive applications, and is fully RoHS compliant, halogen-free, and lead-free. Typical applications include load switching, portable electronics, and power management functions.
The maximum drain-source voltage (Vdss) is 30V.
The operating junction temperature range is -55°C to 150°C.
The package is X1-DFN1006-3, a surface mount package.
Yes, it is RoHS3 compliant, lead-free, and halogen-free.