DMN3404LQ-7

The DMN3404LQ-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated designed for high-efficiency power management applications. It offers a drain-source breakdown voltage of 30V and a continuous drain current of 5.8A (at Vgs=10V) with a maximum on-resistance of only 28 mOhm. The device also specifies on-resistance at lower gate drives: 42 mOhm at 4.5V and 82 mOhm at 3V, enabling flexible drive voltage operation from 3V to 10V.

Key electrical characteristics include a gate threshold voltage of 2V (max at 250 µA), low input capacitance of 498 pF at Vds=15V, and a gate charge of 16 nC at Vgs=10V, supporting fast switching. The maximum power dissipation is 720 mW, and the junction temperature range is -55°C to 150°C.

The MOSFET is housed in a standard SOT-23 surface-mount package (TO-236-3/SC-59 compatible) with a weight of approximately 0.008 grams. It is available in tape and reel packaging with 3000 units per reel. The device is fully RoHS compliant, lead-free, halogen-free, and qualified to AEC-Q101 for automotive applications. Moisture sensitivity is Level 1 per J-STD-020.

Typical applications include battery charging circuits, DC-DC converters, power management functions, and portable power adapters where low conduction losses and compact size are critical.