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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMN3401LDW-13 from Diodes Incorporated is a high-efficiency N-Channel MOSFET suitable for various electronic circuits. It offers a maximum drain-source voltage of 30V and a continuous drain current of 0.8A at 25°C.
This MOSFET exhibits a typical drain-source on-resistance of 400mΩ at 590mA and 10V, with a typical gate threshold voltage of 1.6V at 250µA. Key electrical parameters include a total gate charge (Qg) of 1.2nC at 10V and an input capacitance (Ciss) of 50pF at 15V.
Packaged in a compact SOT-363 surface-mount case, the DMN3401LDW-13 is designed for applications where space is a constraint. It operates within a temperature range of -55°C to 150°C.
This component is well-suited for use in DC-DC converters, power management circuits, and other applications requiring efficient power switching. Its characteristics make it a reliable choice for designs demanding compact and effective MOSFET solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The continuous drain current is 0.8A at 25°C.
The typical Rds(on) is 400mΩ at 590mA and 10V.
The package type is SOT-363.
The operating temperature range is -55°C to 150°C.