DMN33D8LV-7 The DMN33D8LV-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features 30V drain-source voltage, 350mA continuous drain current, and low on-resistance of 2.4Ω at 10V.
Mfr Part #:

DMN33D8LV-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN33D8LV-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features 30V drain-source voltage, 350mA continuous drain current, and low on-resistance of 2.4Ω at 10V.
✓ Total Stock: 130,020 pcs
$ Price Range: $0.07 - $0.10

DMN33D8LV-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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130,020 pcs
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DMN33D8LV-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs(th) (Max) @ Id

DMN33D8LV-7 Description

Short technical summary and product information.

The DMN33D8LV-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for efficient power management. It offers a maximum drain-source voltage of 30V and a continuous drain current of 350mA at 25°C. The device features low on-resistance: 2.4Ω at Vgs=10V, 3Ω at Vgs=4.5V, and 7Ω at Vgs=2.5V, enabling low conduction losses. It also has a low gate charge of 1.23nC and input capacitance of 48pF, supporting fast switching.

 

This MOSFET is housed in a compact SOT-563 surface-mount package, making it suitable for space-constrained designs. It is qualified to AEC-Q101 standards for automotive reliability and includes ESD protection up to 2kV on the gate. The device is RoHS compliant, lead-free, and halogen-free.

 

Typical applications include motor control, DC-DC converters, power management functions, and backlighting. The dual-channel configuration allows for compact implementation of half-bridge or other multi-switch topologies.

DMN33D8LV-7 Quick Information

Product Type: Dual N-Channel MOSFET Array
Canonical Name: DMN33D8LV-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel MOSFET

DMN33D8LV-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN33D8LV-7 Estimated Pricing

Qty Low High
5+ $0.10 $0.10
50+ $0.09 $0.09
150+ $0.08 $0.08
500+ $0.08 $0.08
3,000+ $0.08 $0.08
6,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN33D8LV-7 Features

  • Dual N-channel enhancement mode MOSFET.
  • 30V maximum drain-source voltage rating.
  • 350mA continuous drain current at 25°C.
  • Low on-resistance down to 2.4 ohms.
  • AEC-Q101 qualified for automotive reliability.

DMN33D8LV-7 Applications

  • Motor control and power management circuits.
  • DC-DC converters and voltage regulation.
  • Backlighting and LED driver applications.
  • Compact half-bridge and load switching.

DMN33D8LV-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN33D8LV-7?

The maximum drain-source voltage (Vdss) is 30V.

What package is the DMN33D8LV-7 available in?

It is available in a SOT-563 surface-mount package.

What is the operating temperature range of this MOSFET?

The operating temperature range is -55°C to 150°C (junction).

Is the DMN33D8LV-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the on-resistance at Vgs=4.5V?

The maximum on-resistance is 3Ω at Vgs=4.5V.

Does this MOSFET have ESD protection?

Yes, the gate is ESD protected to 2kV.

Is the DMN33D8LV-7 qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards for high reliability.

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