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DMN33D8LDW-7 DMN33D8LDW-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, rated for 30V drain-source voltage and 250mA continuous current.
Mfr Part #:

DMN33D8LDW-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN33D8LDW-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, rated for 30V drain-source voltage and 250mA continuous current.
✓ Total Stock: 646,790 pcs

DMN33D8LDW-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
646,020 pcs
On Request
646020 pcs On Request 1 On Request On Request On Request On Request On Request
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
770 pcs
On Request
770 pcs On Request 1 On Request On Request On Request On Request On Request
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DMN33D8LDW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight
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DMN33D8LDW-7 Description

Short technical summary and product information.

The DMN33D8LDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed for low on-state resistance and high switching performance, making it suitable for power management applications.

 

Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 250mA at 25°C, and a maximum on-resistance of 2.4 Ohms at Vgs=10V. The device features low input capacitance (48pF) and low gate charge (1.23nC) for efficient switching. It is housed in a surface-mount SOT-363 package (6-TSSOP/SC-88) and operates over a junction temperature range of -55°C to 150°C.

 

Typical applications include motor control, power management functions, DC-DC converters, and backlighting. The MOSFET is qualified to AEC-Q101 standards for high reliability and is RoHS compliant, halogen-free, and lead-free.

DMN33D8LDW-7 Quick Information

Product Type: MOSFET - Array
Canonical Name: DMN33D8LDW-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel MOSFET

DMN33D8LDW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN33D8LDW-7 Features

  • Dual N-channel MOSFET configuration.
  • Maximum drain-source voltage 30V.
  • Continuous drain current 250 mA.
  • Low on-resistance 2.4 Ohm at 10V.
  • Surface-mount SOT-363 package.

DMN33D8LDW-7 Applications

  • Motor control applications.
  • Power management functions.
  • DC-DC converters.
  • Backlighting circuits.
  • Low-power switching circuits.

DMN33D8LDW-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30V

What is the package type?

SOT-363 (6-TSSOP, SC-88)

What is the operating temperature range?

-55°C to 150°C (junction)

Is the DMN33D8LDW-7 RoHS compliant?

Yes, RoHS3 compliant, lead-free, halogen-free.

What is the maximum on-resistance at Vgs=10V?

2.4 Ohms at Id=250mA

What is the dual MOSFET configuration?

2 N-Channel (Dual) enhancement mode

What is the continuous drain current at 25°C?

250 mA

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