DMN32D4SDW-7 Dual N-channel enhancement mode MOSFET with 30V drain-source voltage and 0.65A continuous drain current. Features low on-resistance and ESD protected gate in a SOT-363 package.
Mfr Part #:

DMN32D4SDW-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET with 30V drain-source voltage and 0.65A continuous drain current. Features low on-resistance and ESD protected gate in a SOT-363 package.
✓ Total Stock: 88,087 pcs

DMN32D4SDW-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
88,020 pcs
88020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
67 pcs
67 pcs On Request 1 On Request On Request On Request On Request On Request

DMN32D4SDW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
UL Flammability Rating
Vgs(th) (Max) @ Id
Weight

DMN32D4SDW-7 Description

Short technical summary and product information.

The DMN32D4SDW-7 is a dual N-channel enhancement mode MOSFET designed for low on-state resistance and superior switching performance. It is rated for a drain-source voltage of 30V and a continuous drain current of 0.65A at 25°C (0.5A at 70°C). The maximum on-resistance is 400mOhm at Vgs=10V and 700mOhm at Vgs=4.5V, with a gate charge of 1.3nC and input capacitance of 50pF.

 

This device is suitable for power management functions, motor control, DC-DC converters, and backlighting applications. It features an ESD protected gate and is housed in a surface-mount SOT-363 package. The operating junction temperature range is -55°C to 150°C.

 

The DMN32D4SDW-7 is fully RoHS3 compliant, lead-free, halogen-free, and classified as a green device. It is supplied in tape and reel packaging with 3000 units per reel.

DMN32D4SDW-7 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: Dual N-Channel Enhancement Mode MOSFET, 30V, 0.65A, SOT-363
Subcategory: Arrays

DMN32D4SDW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN32D4SDW-7 Features

  • Low on-resistance: 400mOhm at 10V.
  • ESD protected gate for reliability.
  • Dual N-channel in SOT-363 package.
  • Fast switching speed for efficiency.

DMN32D4SDW-7 Applications

  • Ideal for motor control systems.
  • Used in power management functions.
  • Suitable for DC-DC converter circuits.
  • Applicable for backlighting applications.

DMN32D4SDW-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN32D4SDW-7?

The drain-source voltage rating is 30V.

What is the continuous drain current rating?

The continuous drain current is 0.65A at 25°C and 0.5A at 70°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 400mOhm at Vgs=10V and 700mOhm at Vgs=4.5V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the DMN32D4SDW-7 available in?

The device is available in a SOT-363 surface-mount package.

Is the DMN32D4SDW-7 RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen-free.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.6V at ID=250µA.

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