DMN32D2LFB4-7 N-Channel enhancement mode MOSFET from Diodes Incorporated with 30V drain-source voltage, 300mA continuous drain current, and low on-resistance down to 1.2Ω.
Mfr Part #:

DMN32D2LFB4-7

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated with 30V drain-source voltage, 300mA continuous drain current, and low on-resistance down to 1.2Ω.
✓ Total Stock: 215,185 pcs

DMN32D2LFB4-7 Available from 4 distributors

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187,020 pcs
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28,000 pcs
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DMN32D2LFB4-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape Width
Technology
Termination Finish
UL Flammability Rating
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN32D2LFB4-7 Description

Short technical summary and product information.

The DMN32D2LFB4-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated designed for low on-state resistance and high switching performance. It is ideal for power management applications such as backlighting, DC-DC converters, and general power switching.

 

Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 300mA at 25°C, and a gate threshold voltage of 1.2V maximum. On-resistance is rated at 1.2Ω at Vgs = 4V (415mA test condition), 1.5Ω at Vgs = 2.5V, and 2.2Ω at Vgs = 1.8V, enabling low-voltage gate drive operation. Input capacitance is only 39pF at Vds = 3V, contributing to fast switching.

 

The device is housed in an ultra-small X2-DFN1006-3 surface-mount package (1.0mm x 0.6mm) with NiPdAu over copper leadframe finish. It is AEC-Q101 qualified, RoHS3 compliant, halogen and antimony free (green), and has UL flammability rating 94V-0. The gate is ESD protected for robust handling.

DMN32D2LFB4-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel Enhancement Mode MOSFET, 30V, 300mA, X2-DFN1006-3
Subcategory: Single N-Channel Enhancement Mode

DMN32D2LFB4-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN32D2LFB4-7 Features

  • Ultra-small X2-DFN1006-3 package.
  • Low on-resistance: 1.2Ω max at 4V gate drive.
  • ESD protected gate for robust operation.
  • AEC-Q101 qualified for automotive use.
  • Low input capacitance: 39 pF typical.

DMN32D2LFB4-7 Applications

  • Ideal for backlighting applications.
  • Used in power management circuits.
  • Suitable for DC-DC converter designs.
  • Perfect for load switching in portable devices.

DMN32D2LFB4-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the DMN32D2LFB4-7?

The maximum drain-source voltage is 30 V.

What package does the DMN32D2LFB4-7 come in?

It comes in an X2-DFN1006-3 surface-mount package.

What is the operating temperature range of the DMN32D2LFB4-7?

The operating junction temperature range is -55°C to +150°C.

Is the DMN32D2LFB4-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the maximum continuous drain current?

The maximum continuous drain current is 300 mA at Ta = 25°C.

Does the DMN32D2LFB4-7 have ESD protection?

Yes, the gate is ESD protected.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.2 V at Id = 250 µA.

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