Mfr Part #:

DMN3200U-7

DMN3200U-7 is a 30V, 2.2A N-Channel enhancement mode MOSFET from Diodes Incorporated. It features low on-resistance (90mΩ at 4.5V) and is housed in a SOT-23-3 package.

✓ Total Stock: 18,020 pcs

DMN3200U-7 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,020 pcs On Request	7020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Rayichip ✓ Non-Authorised Inventory information	6,000 pcs On Request	6000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	24+	On Request	On Request

DMN3200U-7 Description

Short technical summary and product information.

The DMN3200U-7 is an N-Channel enhancement mode field effect transistor from Diodes Incorporated. It is designed for low voltage applications requiring efficient switching and low on-resistance. The device offers a drain-source breakdown voltage of 30V and a continuous drain current of 2.2A at 25°C ambient temperature.

Key electrical characteristics include a maximum on-resistance of 90mΩ at VGS=4.5V, 110mΩ at VGS=2.5V, and 200mΩ at VGS=1.5V. The gate threshold voltage ranges from 0.45V to 1.0V, enabling low voltage drive. The input capacitance is 290pF at VDS=10V, and the device features an ESD protected gate rated to 3kV.

The DMN3200U-7 is packaged in a surface mount SOT-23-3 case with matte tin finish. It is qualified to AEC-Q101 standards for high reliability and is RoHS compliant, halogen and antimony free. The device is suitable for load switching, DC-DC converters, and portable battery-powered applications.

DMN3200U-7 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: DMN3200U-7 N-Channel MOSFET

Subcategory: N-Channel MOSFET

DMN3200U-7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Lead Free

DMN3200U-7 Features

Low on-resistance: 90mΩ at 4.5V.
ESD protected gate up to 3kV.
Low gate threshold voltage (0.45V to 1.0V).
Surface mount SOT-23-3 package.
Qualified to AEC-Q101 standards.

DMN3200U-7 Applications

Ideal for load switching applications.
Used in portable battery-powered devices.
Suitable for DC-DC converter circuits.
Applicable in automotive electronics.

DMN3200U-7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the DMN3200U-7?

The drain-source breakdown voltage is 30V (minimum) at VGS=0V, ID=250µA.

What package is the DMN3200U-7 available in?

The DMN3200U-7 is available in a SOT-23-3 surface mount package.

What is the operating temperature range of the DMN3200U-7?

The operating junction temperature range is -55°C to 150°C.

Is the DMN3200U-7 RoHS compliant?

Yes, the DMN3200U-7 is RoHS compliant and lead-free per the datasheet.

What is the continuous drain current rating of the DMN3200U-7?

The continuous drain current is 2.2A at TA=25°C.

What is the on-resistance of the DMN3200U-7 at 4.5V gate drive?

The maximum on-resistance is 90mΩ at VGS=4.5V, ID=2.2A.

Is the DMN3200U-7 qualified for automotive applications?

Yes, the DMN3200U-7 is qualified to AEC-Q101 standards for high reliability.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Diodes Incorporated
Current	2.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
FET Type	N-Channel
Halogen Free	Halogen and Antimony Free
Input Capacitance (Ciss) (Max) @ Vds	290 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	650 mW
Rds On (Max) @ Id, Vgs	90 mΩ
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	0.45V ~ 1.0V
Weight	0.008 g