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DMN31D5UDJ-7 Dual N-channel enhancement mode MOSFET with 30V drain-source voltage and 220mA continuous drain current. Features low on-resistance and ultra-small SOT-963 package.
Mfr Part #:

DMN31D5UDJ-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET with 30V drain-source voltage and 220mA continuous drain current. Features low on-resistance and ultra-small SOT-963 package.
Total Stock: 11,020 pcs

DMN31D5UDJ-7 Available from 1 distributor

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DMN31D5UDJ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Body Diode Forward Current
Configuration
Continuous Drain Current (Nominal @ Ta=70 °C)
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Gate-Source Voltage
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Rds On (Maximum @ Vgs=1.5 V, Id=100 mA)
Rds On (Maximum @ Vgs=1.8 V, Id=100 mA)
Rds On (Maximum @ Vgs=2.5 V, Id=100 mA)
Standard Package Quantity
Supplier Device Package
Tape & Reel
Technology
Terminal Finish
Thermal Resistance Junction-to-Ambient
Vgs(th) (Max) @ Id

DMN31D5UDJ-7 Description

Short technical summary and product information.

The DMN31D5UDJ-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for low-power switching and power management applications. It features a drain-source voltage rating of 30V and a continuous drain current of 220mA at 25°C ambient temperature. The device offers low on-resistance of 1.5Ω maximum at Vgs=4.5V, with even lower gate threshold voltage of 1V maximum, enabling operation at low logic levels.

 

This MOSFET is housed in an ultra-small SOT-963 surface mount package measuring 1mm x 1mm, making it suitable for space-constrained designs. It supports a wide operating temperature range from -55°C to 150°C junction temperature. The device is fully RoHS compliant and halogen-free, with moisture sensitivity level 1 per J-STD-020.

 

Typical applications include general purpose interfacing switches, power management functions, and analog switching. The dual configuration allows for compact implementation of complementary switching circuits. With low input capacitance of 22.6pF and fast switching speed, it is well-suited for high-efficiency power management in portable electronics.

DMN31D5UDJ-7 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: DMN31D5UDJ-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Arrays

DMN31D5UDJ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN31D5UDJ-7 Features

  • Dual N-channel MOSFET in SOT-963 package.
  • 30V drain-source voltage rating.
  • 220mA continuous drain current at 25°C.
  • Low on-resistance of 1.5Ω at 4.5V gate drive.
  • RoHS compliant and halogen-free.

DMN31D5UDJ-7 Applications

  • General purpose interfacing switch.
  • Power management functions in portable devices.
  • Analog switch applications.
  • Low-voltage load switching.

DMN31D5UDJ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN31D5UDJ-7?

30V.

What package is the DMN31D5UDJ-7 available in?

SOT-963 surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the DMN31D5UDJ-7 RoHS compliant?

Yes, it is fully RoHS3 compliant and lead-free.

What is the maximum continuous drain current?

220 mA at 25°C ambient temperature.

What is the on-resistance at 4.5V gate drive?

1.5 Ω maximum.

What is the gate threshold voltage?

1V maximum at 250µA drain current.

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