| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN31D5L-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 500mA at 25°C ambient. The on-resistance is typically low, with a maximum of 1.5 Ohm at Vgs=4V and 2.0 Ohm at Vgs=2.5V, enabling efficient switching even at low gate drive voltages.
The device has a gate threshold voltage of 1.6V maximum, and a maximum gate charge of 1.2nC at Vgs=10V. Input capacitance is only 50pF at Vds=15V, contributing to fast switching performance. The gate is ESD protected for enhanced reliability. Maximum power dissipation is 350mW at 25°C (520mW per datasheet note).
Applications include power management functions, motor control, and backlighting circuits in portable and low-power systems. The MOSFET is housed in a surface-mount SOT-23-3 package with matte tin terminals, weighing approximately 0.009 grams. It is supplied on tape and reel in quantities of 3000 pieces.
The DMN31D5L-7 is fully RoHS3 compliant, lead-free, and halogen and antimony free (Green device). Moisture sensitivity level is 1 per J-STD-020, allowing unlimited floor life.
30V.
SOT-23-3.
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant.
Maximum 1.6V at Id=250µA.
Maximum 2.0 Ohm.