| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
76,020 pcs
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76020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,335 pcs
|
4335 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,606 pcs
|
1606 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN3190LDW-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for efficient power management. It features a maximum drain-source voltage of 30V and a continuous drain current of 1A at 25°C ambient. The on-resistance is typically 190mΩ at 10V gate drive, enabling low conduction losses.
This MOSFET offers low input capacitance of 87pF and a gate charge of 2nC, supporting fast switching speeds. It includes an ESD protected gate for improved robustness. The device is housed in a compact SOT-363 surface-mount package, suitable for space-constrained designs.
Applications include motor control, power management functions, and load switching. The device is fully RoHS compliant, halogen and antimony free, and rated for operation from -55°C to 150°C junction temperature.
The maximum drain-source voltage is 30V.
The continuous drain current is 1A at 25°C ambient with 10V gate drive.
The on-resistance is 190mΩ maximum at 1.3A drain current with 10V gate drive.
It is available in a 6-TSSOP, SC-88, SOT-363 surface-mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is fully RoHS3 compliant and lead-free.