| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
63,000 pcs
|
63000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN3150LW-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It is designed for low voltage switching applications with a maximum drain-source voltage of 28V and continuous drain current of 1.6A at 25°C ambient. The device features low on-resistance: 88mΩ maximum at VGS=4.5V and 138mΩ at VGS=2.5V, enabling efficient power management.
The MOSFET offers fast switching speed and low input capacitance (305pF at VDS=5V), making it suitable for high-frequency circuits. The gate threshold voltage ranges from 0.62V to 1.4V, allowing logic-level drive compatibility. Maximum power dissipation is 350mW at 25°C ambient.
The device is packaged in a surface-mount SOT-323 package, which is compact and suitable for space-constrained designs. It is RoHS3 compliant, lead-free, and halogen-free, meeting environmental standards. The moisture sensitivity level is Level 1 per J-STD-020, ensuring robust handling.
28V.
SOT-323.
-55°C to 150°C.
Yes, it is RoHS3 compliant.
0.94V typical, with minimum 0.62V and maximum 1.4V.
88mΩ.
1.6A at TA=25°C.