DMN3150LW-7 N-Channel enhancement mode MOSFET with 28V drain-source voltage and 1.6A continuous drain current. Features low on-resistance of 88mΩ at 4.5V gate drive and is housed in a surface-mount SOT-323 package.
Mfr Part #:

DMN3150LW-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 28V drain-source voltage and 1.6A continuous drain current. Features low on-resistance of 88mΩ at 4.5V gate drive and is housed in a surface-mount SOT-323 package.
✓ Total Stock: 88,520 pcs

DMN3150LW-7 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
63,000 pcs
63000 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
13,020 pcs
13020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
12,500 pcs
12500 pcs On Request 1 On Request On Request 24+ On Request On Request

DMN3150LW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN3150LW-7 Description

Short technical summary and product information.

The DMN3150LW-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It is designed for low voltage switching applications with a maximum drain-source voltage of 28V and continuous drain current of 1.6A at 25°C ambient. The device features low on-resistance: 88mΩ maximum at VGS=4.5V and 138mΩ at VGS=2.5V, enabling efficient power management.

 

The MOSFET offers fast switching speed and low input capacitance (305pF at VDS=5V), making it suitable for high-frequency circuits. The gate threshold voltage ranges from 0.62V to 1.4V, allowing logic-level drive compatibility. Maximum power dissipation is 350mW at 25°C ambient.

 

The device is packaged in a surface-mount SOT-323 package, which is compact and suitable for space-constrained designs. It is RoHS3 compliant, lead-free, and halogen-free, meeting environmental standards. The moisture sensitivity level is Level 1 per J-STD-020, ensuring robust handling.

DMN3150LW-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN3150LW-7 N-Channel MOSFET
Subcategory: Single MOSFET

DMN3150LW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN3150LW-7 Features

  • N-Channel MOSFET with 28V drain-source voltage.
  • Low on-resistance of 88mΩ at 4.5V gate drive.
  • Continuous drain current rating of 1.6A.
  • Surface-mount SOT-323 package for compact designs.
  • RoHS3 compliant and lead-free construction.

DMN3150LW-7 Applications

  • Ideal for low-voltage load switching circuits.
  • Suitable for DC-DC converter designs.
  • Used in portable electronics power management.
  • Applicable for logic-level gate drive applications.

DMN3150LW-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN3150LW-7?

28V.

What is the package type of the DMN3150LW-7?

SOT-323.

What is the operating temperature range?

-55°C to 150°C.

Is the DMN3150LW-7 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the typical gate threshold voltage?

0.94V typical, with minimum 0.62V and maximum 1.4V.

What is the maximum drain-source on-resistance at VGS=4.5V?

88mΩ.

What is the maximum continuous drain current?

1.6A at TA=25°C.

Home
Account

Categories