DMN3150L-7 N-Channel enhancement mode MOSFET with 28V drain-source voltage and 3.8A continuous drain current. Features low on-resistance down to 54mΩ at 10V gate drive.
Mfr Part #:

DMN3150L-7

Available from 5 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 28V drain-source voltage and 3.8A continuous drain current. Features low on-resistance down to 54mΩ at 10V gate drive.
✓ Total Stock: 899,360 pcs

DMN3150L-7 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

DMN3150L-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMN3150L-7 Description

Short technical summary and product information.

The DMN3150L-7 is a N-Channel enhancement mode field effect transistor from Diodes Incorporated, designed for low voltage switching applications. It features a maximum drain-source voltage of 28V (30V breakdown) and continuous drain current rating of 3.8A at 25°C ambient temperature. The device offers low on-resistance: 54mΩ maximum at 10V gate drive, 72mΩ at 4.5V, and 115mΩ at 2.5V, enabling efficient power management.

 

Key electrical characteristics include a low gate threshold voltage of 1.4V maximum, low input capacitance of 305pF at 5V Vds, and fast switching speed. The MOSFET can handle pulsed drain currents up to 15A and includes a body diode rated for 2A continuous current. Power dissipation is 1.4W at 25°C with a junction-to-ambient thermal resistance of 90°C/W.

 

Packaged in a surface-mount SOT-23-3 (TO-236-3, SC-59) case, the device is supplied in tape and reel packaging with 3000 units per reel. The terminals have matte tin finish over copper leadframe, and the molding compound is UL 94V-0 rated. The DMN3150L-7 is fully RoHS compliant, lead-free, and halogen and antimony free, suitable for environmentally sensitive designs.

DMN3150L-7 Quick Information

Product Type: MOSFET (Metal Oxide)
Canonical Name: Diodes Incorporated DMN3150L-7 N-Channel MOSFET
Subcategory: Single MOSFET

DMN3150L-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN3150L-7 Features

  • Low on-resistance: 54mΩ at 10V drive.
  • 28V drain-source voltage rating.
  • 3.8A continuous drain current at 25°C.
  • Surface mount SOT-23-3 package.
  • RoHS compliant and halogen free.

DMN3150L-7 Applications

  • Used in low voltage DC-DC converters.
  • Ideal for load switching applications.
  • Suitable for power management circuits.
  • Applicable in portable battery-powered devices.
  • Used in automotive and industrial controls.

DMN3150L-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN3150L-7?

The maximum drain-source voltage (Vdss) is 28V, with a minimum breakdown voltage of 30V at VGS=0V and ID=250µA.

What is the maximum continuous drain current?

The continuous drain current is 3.8A at 25°C ambient temperature and 3.1A at 70°C.

What is the on-resistance of the DMN3150L-7?

Maximum on-resistance is 54mΩ at VGS=10V, 72mΩ at VGS=4.5V, and 115mΩ at VGS=2.5V.

What package does the DMN3150L-7 come in?

The device is offered in a SOT-23-3 surface mount package, also referred to as TO-236-3 or SC-59.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN3150L-7 RoHS compliant?

Yes, the datasheet states it is fully RoHS3 compliant.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.4V at ID=250µA.

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