| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
DMN3115UDM-7 is an N-channel MOSFET manufactured by Diodes Incorporated. It has a drain-source voltage rating of 30V and a continuous drain current of 3.2A at ambient temperature. The on-resistance is specified with a maximum of 60mOhm at 4.5V gate-source voltage and 6A drain current.
The device's maximum gate threshold voltage is 1V at 250µA drain current. The input capacitance is 476pF at 15V drain-source voltage. Maximum power dissipation is 900mW at ambient temperature, and the junction temperature range is -55°C to 150°C.
The MOSFET comes in a surface-mount SOT-26 package (also known as SOT-23-6). Its small footprint suits space-constrained applications like portable devices and load switches. The part is listed as RoHS3 compliant in the existing database, though this has not been independently verified.
| Qty | Low | High |
|---|---|---|
| 5+ | $0.17 | $0.17 |
| 50+ | $0.15 | $0.15 |
| 150+ | $0.14 | $0.14 |
| 500+ | $0.13 | $0.13 |
| 3,000+ | $0.13 | $0.13 |
| 6,000+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
3.2A at ambient temperature (Ta).
Maximum 60mOhm at Vgs=4.5V and Id=6A.
Maximum 1V at Id=250µA.
-55°C to 150°C (junction temperature).
SOT-26 (also specified as SOT-23-6) surface-mount package.
Listed as RoHS3 compliant, though the source is unverified.