| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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78,000 pcs
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78000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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DMN3110LCP3-7 is an N-Channel MOSFET manufactured by Diodes Incorporated. The device offers a drain-to-source voltage rating of 30V and a continuous drain current of 3.2A at 25°C ambient temperature. The maximum on-state resistance is 69mΩ at a gate-source voltage of 8V and drain current of 500mA, with a maximum gate threshold voltage of 1.1V at 250µA.
The MOSFET features a maximum gate-source voltage of 12V and a low gate charge of 1.52nC at 4.5V, enabling efficient high-speed switching. Its input capacitance is 150pF at 15V drain-source voltage. The device is capable of dissipating up to 1.38W of power and operates over a junction temperature range of -55°C to 150°C.
This part is supplied in a compact 3-XFDFN package with supplier device package designation X2-DFN1006-3, ideal for space-constrained surface-mount designs. The low threshold voltage and low on-resistance make it suitable for portable electronics, load switching, and DC-DC converter applications.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The DMN3110LCP3-7 has a maximum drain-to-source voltage rating of 30V.
The DMN3110LCP3-7 is available in a 3-XFDFN surface-mount package, specifically the X2-DFN1006-3 supplier device package.
The operating junction temperature range is -55°C to 150°C.
According to the product record, the DMN3110LCP3-7 is listed as RoHS3 compliant.
The continuous drain current is 3.2A at 25°C ambient temperature.
The maximum on-resistance is 69mΩ at a drain current of 500mA with a gate-source voltage of 8V.
The maximum gate-source voltage is 12V.