| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,249 pcs
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4249 pcs | On Request | 1 | On Request | On Request | 1420+ | On Request | On Request |
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The DMN30H4D0LFDE-7 is an N-Channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for high efficiency power management applications.
Key electrical specifications include a maximum drain-source voltage of 300V, a continuous drain current of 0.55A at +25°C, and a maximum drain-source on-resistance of 4Ω at VGS=10V. The device also features a low gate threshold voltage and fast switching speed.
The MOSFET is housed in a U-DFN2020-6 package with a 0.6mm profile, ideal for low profile applications. It is totally lead-free, fully RoHS compliant, and halogen and antimony free. The device is qualified to AEC-Q101 standards for high reliability.
The maximum drain-source voltage (Vdss) is 300V.
The continuous drain current is 0.55A at TA=+25°C and 0.43A at TA=+70°C.
The maximum drain-source on-resistance is 4Ω at VGS=10V and ID=300mA, and 6Ω at VGS=2.7V.
It is available in a U-DFN2020-6 package.
Yes, it is totally lead-free and fully RoHS compliant.