| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
76,020 pcs
|
76020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN30H4D0L-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated designed for high efficiency power management applications. It features a drain-source breakdown voltage of 300V and a continuous drain current of 250mA at 25°C. The device offers a low on-resistance of 4 Ohm maximum at VGS=10V and ID=300mA, with a gate threshold voltage of 3V maximum at ID=250µA. Total gate charge is 7.6 nC at VGS=10V, and input capacitance is 187.3 pF at VDS=25V, enabling fast switching performance.
Typical applications include DC-DC converters, power management functions, battery operated systems, solid-state relays, and drivers for relays, solenoids, lamps, and displays. The MOSFET is housed in a small SOT-23 surface mount package (also known as TO-236-3 or SC-59) and is supplied in tape and reel packaging with 3,000 pieces per reel.
The DMN30H4D0L-7 is fully RoHS3 compliant, lead-free, halogen and antimony free, and qualified to AEC-Q101 standards for high reliability. Moisture sensitivity level is 1 (unlimited) per J-STD-020. Operating temperature range is -55°C to 150°C.
300V.
SOT-23 (TO-236-3, SC-59, SOT-23-3).
-55°C to 150°C.
Yes, RoHS3 compliant and lead-free.
3V at 250µA drain current.
4 Ohm at VGS=10V and ID=300mA.
7.6 nC at VGS=10V.