DMN3070SSN-7 DMN3070SSN-7 is a 30V N-Channel enhancement mode MOSFET from Diodes Incorporated. It offers 4.2A continuous drain current and 40mΩ on-resistance at 10V gate drive.
Mfr Part #:

DMN3070SSN-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN3070SSN-7 is a 30V N-Channel enhancement mode MOSFET from Diodes Incorporated. It offers 4.2A continuous drain current and 40mΩ on-resistance at 10V gate drive.
✓ Total Stock: 174,020 pcs

DMN3070SSN-7 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
169,020 pcs
169020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 24+ On Request On Request

DMN3070SSN-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN3070SSN-7 Description

Short technical summary and product information.

The DMN3070SSN-7 is a 30V N-Channel enhancement mode MOSFET designed for high efficiency power management applications. It features a low on-resistance of 40mΩ at VGS = 10V and 50mΩ at VGS = 4.5V, enabling efficient switching and reduced conduction losses.

 

This MOSFET supports a continuous drain current of 4.2A at 25°C (steady state) and up to 5.1A for short durations (t<10s). The device is ESD protected with a 2kV gate rating and offers a gate threshold voltage of 2.1V maximum at 250µA drain current.

 

The DMN3070SSN-7 is housed in a surface-mount SC59 package (also known as TO-236-3 or SOT-23-3) with matte tin solderable terminals. It is qualified to AEC-Q101 standards for high reliability and is fully RoHS compliant, lead-free, and halogen-free.

DMN3070SSN-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN3070SSN-7 N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel Enhancement Mode MOSFET

DMN3070SSN-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN3070SSN-7 Features

  • 30V drain-source voltage rating.
  • 4.2A continuous drain current at 25°C.
  • 40mΩ on-resistance at 10V gate drive.
  • ESD protected gate up to 2kV.
  • AEC-Q101 qualified for automotive reliability.

DMN3070SSN-7 Applications

  • Load switch for power management.
  • DC-DC converter circuits.
  • Power management functions in portable devices.
  • Automotive electronics requiring high reliability.

DMN3070SSN-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN3070SSN-7?

The maximum drain-source voltage (Vdss) is 30V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 4.2A at TA = 25°C with VGS = 10V (steady state).

What is the on-resistance of the DMN3070SSN-7?

The maximum on-resistance is 40mΩ at VGS = 10V and ID = 4.2A, and 50mΩ at VGS = 4.5V.

What package is the DMN3070SSN-7 available in?

The device is available in a surface-mount SC59 package (also known as TO-236-3 or SOT-23-3).

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the DMN3070SSN-7 RoHS compliant?

Yes, it is fully RoHS3 compliant and totally lead-free.

Is the DMN3070SSN-7 qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards for high reliability.

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