| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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111,020 pcs
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111020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN3060LCA3-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize footprint in handheld and mobile applications. It features a drain-source breakdown voltage of 30V and a continuous drain current of 3.9A at 25°C. The device offers low on-resistance: 60mΩ maximum at VGS=8V and 72mΩ maximum at VGS=4.5V, enabling efficient power management.
Key electrical characteristics include a low gate charge of 1.677nC at VGS=4.5V and an input capacitance of 192pF at VDS=15V, supporting fast switching. The gate threshold voltage is 1.1V maximum at ID=250μA. The MOSFET is housed in an ultra-small X4-DSN1006-3 surface mount package with a low profile of 0.20mm height, ideal for space-constrained designs.
The device is totally lead-free and RoHS3 compliant, with moisture sensitivity level 1 per J-STD-020. It is suitable for battery management, load switching, battery protection, and other handheld and mobile applications. Operating temperature range is -55°C to 150°C (junction).
30V.
X4-DSN1006-3 surface mount package.
-55°C to 150°C (junction).
Yes, RoHS3 compliant and totally lead-free.
3.9A at 25°C with VGS=8V.
72mΩ maximum at 500mA.
1.677nC maximum at VGS=4.5V.