| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,500 pcs
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12500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The DMN3053L-7 is an N-Channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it suitable for high efficiency power management applications.
Electrical specifications include a drain-source voltage (Vdss) of 30V and continuous drain current of 4A at +25°C (3.5A at +70°C). Maximum on-resistance is 45mΩ at Vgs=10V and 4A, and 50mΩ at Vgs=4.5V and 3.5A. Gate charge is 17.2nC at 10V. Input capacitance is 676pF at Vds=15V. The device also has ESD protected gate and low input/output leakage.
This MOSFET is offered in a SOT23 surface mount package. Case material is green molding compound with a UL flammability rating of 94V-0. The part is qualified to AEC-Q101 standards for high reliability. Terminals are matte tin annealed over copper leadframe.
The maximum drain to source voltage (Vdss) is 30V.
The continuous drain current is 4A at TA=+25°C (Vgs=10V) and 3.5A at TA=+70°C.
Maximum on-resistance is 45mΩ at 4A and Vgs=10V, and 50mΩ at 3.5A and Vgs=4.5V.
The DMN3053L-7 is available in a SOT23 surface mount package.
Yes, the DMN3053L-7 is fully RoHS compliant and lead-free. It is also halogen and antimony free.