| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | On Request |
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The DMN3053L-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a drain-source voltage rating of 30V and a continuous drain current of 4A at 25°C ambient temperature. The device offers low on-resistance of 45mΩ at VGS=10V and 50mΩ at VGS=4.5V, enabling efficient switching and reduced power losses.
This MOSFET is characterized by low gate threshold voltage (maximum 1.4V at 250µA), low input capacitance (676pF at VDS=15V), and low gate charge (17.2nC at VGS=10V), which contribute to fast switching performance. The gate is ESD protected, enhancing reliability in handling and operation. The device is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive and industrial applications.
The DMN3053L-13 is housed in a SOT23-3 surface-mount package with matte tin annealed over copper leadframe terminals. The case is molded plastic with a green molding compound, UL flammability rating 94V-0. It is lead-free, RoHS compliant, and halogen- and antimony-free. The device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 760mW at ambient temperature.
Typical applications include load switches, DC-DC converters, and power management functions. The low on-resistance and fast switching characteristics make it suitable for high-efficiency power conversion circuits.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 4A at Ta=25°C.
The maximum on-resistance is 45mΩ at VGS=10V and Id=4A.
The operating junction temperature range is -55°C to 150°C.
Yes, the DMN3053L-13 is RoHS compliant (no purposely added lead, fully EU Directive 2002/95/EC & 2011/65/EU compliant).
The DMN3053L-13 is available in a SOT23-3 surface-mount package.
The maximum power dissipation is 760mW at ambient temperature (Ta).