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DMN3052LSS-13 N-Channel MOSFET, 30V drain-source voltage, 7.1A continuous drain current, surface mount SO-8 package.
Mfr Part #:

DMN3052LSS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel MOSFET, 30V drain-source voltage, 7.1A continuous drain current, surface mount SO-8 package.
Total Stock: 5,000 pcs

DMN3052LSS-13 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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5,000 pcs
5000 pcs On Request 1 On Request On Request 24+ On Request On Request

DMN3052LSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Qualification
Current
Drain Current (Continuous) (Maximum @ Ta=70 °C)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Packaging Type
Power Dissipation (Max)
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Standard Package Quantity
Supplier Device Package
Technology
Termination Finish
Thermal Resistance Junction-to-Ambient
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
drain_source_on_resistance (Maximum @ Vgs = 2.5 V, Id = 4.9 A)
drain_source_on_resistance (Maximum @ Vgs = 4.5 V, Id = 6.2 A)

DMN3052LSS-13 Description

Short technical summary and product information.

The DMN3052LSS-13 is a single N-Channel enhancement mode MOSFET from Diodes Incorporated. It is designed for high-efficiency power management applications such as backlighting, DC-DC converters, and general power switching. Key specifications include a drain-source voltage (Vdss) of 30V, continuous drain current of 7.1A at 25°C ambient, and pulsed drain current up to 28A. The device features low on-resistance: 30mΩ at Vgs=10V, 40mΩ at Vgs=4.5V, and 63mΩ at Vgs=2.5V. Gate threshold voltage is 1.2V max at 250µA. Input capacitance is 555pF at Vds=5V. The MOSFET is housed in an 8-SOIC (SO-8) surface mount package with a matte tin finish over a copper leadframe. It is qualified to AEC-Q101 standards for automotive reliability and is RoHS compliant, halogen-free, and MSL Level 1 per J-STD-020. Operating junction temperature range is -55°C to 150°C. Maximum power dissipation is 2.5W at 25°C ambient with a thermal resistance of 50°C/W junction-to-ambient.

DMN3052LSS-13 Quick Information

Product Type: Single MOSFET
Series: DMN3052LSS
Canonical Name: DMN3052LSS-13 N-Channel MOSFET
Subcategory: Single MOSFET

DMN3052LSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: No purposely added lead

DMN3052LSS-13 Features

  • Low on-resistance of 30mΩ at 10V gate drive.
  • Rated for 30V drain-source voltage.
  • Continuous drain current up to 7.1A.
  • AEC-Q101 qualified for automotive use.
  • RoHS compliant and halogen-free.

DMN3052LSS-13 Applications

  • Ideal for backlighting power management.
  • Used in DC-DC converter circuits.
  • Suitable for high-efficiency power switching.
  • Automotive grade for reliable operation.

DMN3052LSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the maximum continuous drain current?

7.1A at 25°C ambient.

What is the on-resistance?

30mΩ at Vgs=10V, Id=7.1A.

What is the operating temperature range?

-55°C to 150°C (junction).

Is this part RoHS compliant?

Yes, RoHS compliant (RoHS2).

What package is this MOSFET available in?

8-SOIC (SO-8) surface mount package.

Is this part qualified for automotive applications?

Yes, AEC-Q101 qualified.

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