| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The DMN3052L-7 is an N-Channel enhancement mode field effect transistor from Diodes Incorporated, designed for low voltage applications. It features a maximum drain-source voltage of 30V and continuous drain current of 5.4A at 25°C. The device offers low on-resistance: typically 32mΩ at VGS=10V, 42mΩ at 4.5V, 64mΩ at 2.5V, and 100mΩ at 2.0V. Gate threshold voltage ranges from 0.62V minimum to 1.2V maximum with a typical value of 0.9V. Input capacitance is 555pF typical, ensuring fast switching performance. The device is qualified to AEC-Q101 standards for high reliability and is lead-free by design / RoHS compliant. It is molded in a green compound and has a moisture sensitivity level of 1 per J-STD-020D. The packaging is a SOT-23 surface-mount package with matte tin termination. However, note that Diodes Incorporated does not recommend this part for new designs; it suggests using the DMG3402L as a replacement. Applications include load switching, DC-DC converters, and power management in portable and automotive systems.
30V.
SOT-23 (also known as TO-236-3, SC-59).
-55°C to +150°C.
Yes, it is RoHS3 compliant and lead-free by design.
Maximum 32mΩ at ID=5.8A.
0.9V (with range 0.62V min to 1.2V max).
Yes, it is AEC-Q101 qualified.